FDB3682 Allicdata Electronics

FDB3682 Discrete Semiconductor Products

Allicdata Part #:

FDB3682FSTR-ND

Manufacturer Part#:

FDB3682

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 6A TO-263AB
More Detail: N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Surface ...
DataSheet: FDB3682 datasheetFDB3682 Datasheet/PDF
Quantity: 800
Stock 800Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 95W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 36 mOhm @ 32A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDB3682 from ON Semiconductor is an N-Channel PowerTrench® MOSFET with an exceptionally low RDS(on) and a very good avalanche rating. This level of performance makes the FDB3682 suitable for use in a wide range of power applications, ranging from motor control and switching, to power switching, amplifying, and loads applications. The device is built using a special PowerTrench® process, which is designed to give a very low on-resistance and high obstruction subthreshold performance for low power loss and high efficiency.

The FDB3682 has an exceptional RDS(on) rating of just 0.004Ω, meaning that it is suitable for use in applications where power dissipation needs to be kept to a minimum - such as in power switching applications. Additionally, the device has good avalanche rating, which makes it suitable for use in applications subject to large voltage and current surges. Additionally, the FDB3682 has a very low gate charge, making it suitable for use in applications where fast switching is required.

The FDB3682 is a single channel N-channel MOSFET, built using the PowerTrench® process. The device is designed to have a very low on-resistance and high subthreshold performance, making it suitable for use in applications that require low power loss and high efficiency. Additionally, the device has an exceptional avalanche rating, making it suitable for use in applications subject to large voltage and current surges.

The FDB3682 has a number of potential applications, ranging from motor control and switching, to power switching, amplifying, and loads applications. In motor control and switching applications, the device\'s low RDS(on) rating and high avalanche rating make it well-suited for use in power supplies, DC-DC converters, DC motors, and other such applications. In power switching applications, the device\'s low gate charge and low RDS(on) rating make it well-suited for use in load switches, application-specific power switches, and other such applications. In amplifying applications, the device\'s low gate charge and good avalanche rating make it well-suited for use in high-current amplifiers and other such applications. In loads applications, the device\'s low RDS(on) rating and high avalanche rating make it well-suited for use in high-current loads and other such applications.

The FDB3682 is designed to have a very low on-resistance, making it ideal for use in applications where power dissipation needs to be kept to a minimum. Additionally, the device\'s low gate charge and good avalanche rating make it suitable for use in applications subject to large voltage and current surges. When connected in an appropriate circuitry, the FDB3682 allows for fast switching and low power loss, making it a very efficient option for a variety of power applications.

The specific data is subject to PDF, and the above content is for reference

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