
FDB3682 Discrete Semiconductor Products |
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Allicdata Part #: | FDB3682FSTR-ND |
Manufacturer Part#: |
FDB3682 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 6A TO-263AB |
More Detail: | N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Surface ... |
DataSheet: | ![]() |
Quantity: | 800 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 95W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 36 mOhm @ 32A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDB3682 from ON Semiconductor is an N-Channel PowerTrench® MOSFET with an exceptionally low RDS(on) and a very good avalanche rating. This level of performance makes the FDB3682 suitable for use in a wide range of power applications, ranging from motor control and switching, to power switching, amplifying, and loads applications. The device is built using a special PowerTrench® process, which is designed to give a very low on-resistance and high obstruction subthreshold performance for low power loss and high efficiency.
The FDB3682 has an exceptional RDS(on) rating of just 0.004Ω, meaning that it is suitable for use in applications where power dissipation needs to be kept to a minimum - such as in power switching applications. Additionally, the device has good avalanche rating, which makes it suitable for use in applications subject to large voltage and current surges. Additionally, the FDB3682 has a very low gate charge, making it suitable for use in applications where fast switching is required.
The FDB3682 is a single channel N-channel MOSFET, built using the PowerTrench® process. The device is designed to have a very low on-resistance and high subthreshold performance, making it suitable for use in applications that require low power loss and high efficiency. Additionally, the device has an exceptional avalanche rating, making it suitable for use in applications subject to large voltage and current surges.
The FDB3682 has a number of potential applications, ranging from motor control and switching, to power switching, amplifying, and loads applications. In motor control and switching applications, the device\'s low RDS(on) rating and high avalanche rating make it well-suited for use in power supplies, DC-DC converters, DC motors, and other such applications. In power switching applications, the device\'s low gate charge and low RDS(on) rating make it well-suited for use in load switches, application-specific power switches, and other such applications. In amplifying applications, the device\'s low gate charge and good avalanche rating make it well-suited for use in high-current amplifiers and other such applications. In loads applications, the device\'s low RDS(on) rating and high avalanche rating make it well-suited for use in high-current loads and other such applications.
The FDB3682 is designed to have a very low on-resistance, making it ideal for use in applications where power dissipation needs to be kept to a minimum. Additionally, the device\'s low gate charge and good avalanche rating make it suitable for use in applications subject to large voltage and current surges. When connected in an appropriate circuitry, the FDB3682 allows for fast switching and low power loss, making it a very efficient option for a variety of power applications.
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