FDB38N30U Discrete Semiconductor Products

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The FDB38N30U is a FET (field effect transistor) of the Power MOSFET type. This is an insulated gate type, also known as a Metal Oxide Semiconductor FET, which makes it unique in its performance capabilities. As part of the Field Effect Transistors family, the FDB38N30U is a single type device that works by affecting the conductivity of electrons by the modulation of an electric field.

The FDB38N30U is designed to be used in a wide array of applications. As a logic level device, the FDB38N30U is ideal for switching, rectifying, and amplifying applications. It is designed to work with voltages up to 100 volts, and can be used as a transistor, a rectifier, or an amplifier.

The FDB38N30U device is also a powerful device, with a total drain-to-source breakdown voltage up of up to 100V, and an output drain current of up to 28A. Additionally, the P-channel MOSFET version has an intrinsic fast switching capability with a low gate threshold voltage.

The working principle of the FDB38N30U is based on the concept of field-effect. An electric field between the source and drain of the transistor controls the flow of current by modulating the conductivity between those two points. This is done by the application of a gate voltage, which changes the conductivity; when the gate is at a positive voltage, the current through the transistor increases. To turn off the transistor, the gate voltage is lowered to a point that stops current from flowing.

The FDB38N30U operates best at temperatures between -40°C and 100°C. It is also extremely durable, with a drain-to-source voltage withstand rating of up to 100V, an increase in temperature that reduces power losses, and a maximum junction temperature of 170°C.

In addition to its broad use in applications such as switching, rectifying, and amplifying, the FDB38N30U has also been used in a variety of alternative energy applications. These include solar cells, wind turbines, and alternative fuel generation systems. In these applications, the FDB38N30U helps to regulate the flow of energy and to maximize efficiency and performance.

In conclusion, the FDB38N30U is a powerful and efficient field effect transistor. It is designed to be utilized in a variety of applications, including switching, rectifying, and amplifying. Additionally, it is capable of being used in alternative energy applications, such as solar cells and other green energy generation systems. The FDB38N30U operates best at temperatures between -40°C and 100°C, and has a drain-to-source voltage withstand rating of up to 100V.

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