FDB3652 Allicdata Electronics

FDB3652 Discrete Semiconductor Products

Allicdata Part #:

FDB3652TR-ND

Manufacturer Part#:

FDB3652

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 61A TO-263AB
More Detail: N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface...
DataSheet: FDB3652 datasheetFDB3652 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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The FDB3652 is an integrated circuit (IC) commonly used to switch electrical signals on and off in a circuit. It is a form of field-effect transistor, known as an insulated-gate FET (IGFET), and belongs to the metal oxide semiconductor-type family (MOSFET). FDB3652 works as a single switch with a single gate, eliminating the need for multiple switches.

Principle of Operation

FDB3652 is a voltage-controlled semiconductor device, in which the semiconductor is a thin layer of either metal or metal oxide. This thin layer is coated on one side with a gate dielectric material, such as silicon dioxide. The gate controls the flow of semiconductor carriers (electrons and holes), such as electrons in an N-channel MOSFET, by creating an electric field. When the gate voltage is low, the electric field attracts many semiconductor carriers to the gate area, and the device is in an "on" state. When the gate voltage is high, few or no semiconductor carriers are attracted, and the device is in an "off" state. In other words, by controlling the gate voltage, FDB3652 can switch a large current from a low voltage supply, with no current flowing through the gate. This makes FDB3652 ideal for use as a low-power switching mechanism in various applications.

Applications for FDB3652

FDB3652 can be used for various applications including medium to high-power switching, laser diode drivers, and power supply modulation. As a medium to high-power switch, FDB3652 can control multiple motors, solenoids, and other medium to high-power loads including automotive engines and other industrial applications. FDB3652 is also used frequently in laser diode drivers and power supply modulation applications such as adjustable voltage regulators and LED drivers. As FDB3652 has very low gate-source capacitance, it is ideal for high-frequency switching applications where very fast switching is required. Additionally, FDB3652 can be used in DC to DC converters and other power control applications due to its high current carrying capacity and low power consumption.

Advantages of Using FDB3652

The FDB3652 offers a number of advantages over other switching technologies. Firstly, the FDB3652 is a very reliable and robust device due to its insulated gate, which reduces the effects of corrosion, dust, and other unwanted elements. Secondly, its wide temperature range of -55°C to +125°C makes it suitable for use in extreme temperature environments, making it ideal for automotive applications. Thirdly, the FDB3652 has very low gate-source capacitance, which makes it ideal for high-frequency switching applications. Lastly, the FDB3652 is a highly efficient device due to its low power consumption and high current-carrying capacity.

Conclusion

In conclusion, FDB3652 is an integrated circuit commonly used to switch electrical signals on and off in a circuit. It is an insulated gate FET (IGFET) and belongs to the metal oxide semiconductor-type family (MOSFET). FDB3652 is widely used owing to its reliability, wide temperature range, low gate-source capacitance and high current-carrying capacity, making it ideal for medium to high-power switching, laser diode drivers and power supply modulation applications.

The specific data is subject to PDF, and the above content is for reference

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