FDB3672

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The FDB3672 is a high-performance, Wide-bandwidth Dual N-Channel MOSFET. Manufactured with advanced Field-Plate Trench technology, the FDB3672 provides enhanced performance over a wide range of conditions. This device is typically used in a myriad of switching and power management applications.

The FDB3672 is designed to handle a large range of voltages and power, allowing it to be used in many different applications such as power switching, power supply control, and voltage regulation. It features low on-resistance and fast switching times, making it suitable for a wide variety of high-speed, high-power switching applications. The high frequency capabilities of the FDB3672 also make it ideal for frequency-sensitive applications such as radio frequency (RF) and high frequency switching.

The FDB3672 has a number of applications in the industrial and consumer markets. It is ideal for use in portable electronic devices such as mobile phones and tablets, as it is capable of providing fast switching times in order to conserve battery life. The device is also suitable for use in industrial control and medical applications, where its fast response time and low on-resistance are beneficial. Other applications include high-power DC conversion, AC/DC converters, and switching power converters.

The FDB3672 is designed with a dual N-Channel MOSFET configuration to provide low on-resistance and high switching performance. This makes the device ideal for a variety of power management applications, as the N-channel structure allows for fast switching speed. It is well-suited for a variety of topologies, including voltage-mode, current-mode, and pulse-width modulation (PWM).

In addition to its low on-resistance and high switching performance, the FDB3672 also features a wide power range from 10V to 100V, making it suitable for both low- and high- voltage applications. It has a maximum peak current rating of 32A and a maximum power dissipation of 225W. The device also has an easily adjustable triggering threshold voltage, making it easy to use in applications that require precise control.

The FDB3672 is manufactured using the advanced Field-Plate Trench technology, which provides superior performance characteristics over traditional power MOSFETs. This technology utilizes a pair of trenches to reduce the parasitic capacitance of the device and improve its high-frequency characteristics. The trenches also provide better cooling, which allows the device to operate at higher frequencies and high switching speeds.

The FDB3672 is a high-performance, Wide-bandwidth Dual N-Channel MOSFET that offers an ideal solution for a variety of power management applications, from portable electronics to industrial control and medical applications. Its low on-resistance, fast switching times, and wide power range, make it an ideal choice for applications that require precise control. It is also well-suited for both low- and high-voltage applications, thanks to its advanced Field-Plate Trench technology, which provides superior performance characteristics over traditional power MOSFETs.

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