FDB3652-F085 Discrete Semiconductor Products |
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Allicdata Part #: | FDB3652-F085TR-ND |
Manufacturer Part#: |
FDB3652-F085 |
Price: | $ 1.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 61A D2PAK |
More Detail: | N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface... |
DataSheet: | FDB3652-F085 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.03745 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2880pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
Series: | Automotive, AEC-Q101, PowerTrench® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 61A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 61A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDB3652-F085 is a Logic Level Power MOSFET, specifically designed to minimise gate charge and on-state resistance. It is ideal for switching applications, allowing very high switching frequencies. This paper will explain the application field and working principle of this kind of MOSFET, with help from actual application examples.
Application Field
FDB3652-F085 is mainly used for DC low- and high-side switching, hence is a suitable choice for applications involving lighting control, motor control and other types of power management. This kind of MOSFET is a complement to the FDB3652-F085, which usually locate at a higher voltage range.
In a typical system, FDB3652-F085 can be utilized to control the current of semiconductor switches, allowing the switch to turn on or off any area. Its applications can also extend to power supplies, offering improved efficiency and reduced noise by maintaining the lowest on-state resistance.
FDB3652-F085 is also commonly used in Li-powered systems, such as cell phones and tablets. Li-powered systems seeks for minimum power loss and require the switching frequency to be increased. FDB3652-F085 can provide more efficient power control in those systems.
Working Principle
MOSFETs are known to be “voltage-controlled” semiconductor devices. It means that when the voltage between its gate and its source is lower than the threshold voltage (VTH), the channel connecting the source and the drain will be turned on and current flows through it. The ratio between the voltage applied to the gate and the current passing through the channel is termed as transconductance.
FDB3652-F085 is a Logic Level Power MOSFET. Its gate-source breakdown voltage is very low, due to the special client coating process. This indicates that voltage units as low as 3.3V can be used to turn on the gate. The low gate threshold voltage combined with the highly enhanced gate insulation layer allows FDB3652-F085 to operate with greater power efficiency.
Because of its unique features, FDB3652-F085 can switch up to 5A continuously with a low on-state resistance. The maximum power dissipation and the RDS(on) ratings are largely affected by the operating temperature and other external conditions.
Conclusion
FDB3652-f085 is an ideal choice for DC low- and high-side switching, as it can provide maximum power efficiency and low on-state resistance. Its low gate-source threshold voltage allows relatively low input voltage and high switching speed. It is widely used in power management and Li-powered systems.
The specific data is subject to PDF, and the above content is for reference
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