FDB3652-F085 Allicdata Electronics

FDB3652-F085 Discrete Semiconductor Products

Allicdata Part #:

FDB3652-F085TR-ND

Manufacturer Part#:

FDB3652-F085

Price: $ 1.16
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 61A D2PAK
More Detail: N-Channel 100V 9A (Ta), 61A (Tc) 150W (Tc) Surface...
DataSheet: FDB3652-F085 datasheetFDB3652-F085 Datasheet/PDF
Quantity: 1000
800 +: $ 1.03745
Stock 1000Can Ship Immediately
$ 1.16
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Series: Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs: 16 mOhm @ 61A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDB3652-F085 is a Logic Level Power MOSFET, specifically designed to minimise gate charge and on-state resistance. It is ideal for switching applications, allowing very high switching frequencies. This paper will explain the application field and working principle of this kind of MOSFET, with help from actual application examples.

Application Field

FDB3652-F085 is mainly used for DC low- and high-side switching, hence is a suitable choice for applications involving lighting control, motor control and other types of power management. This kind of MOSFET is a complement to the FDB3652-F085, which usually locate at a higher voltage range.

In a typical system, FDB3652-F085 can be utilized to control the current of semiconductor switches, allowing the switch to turn on or off any area. Its applications can also extend to power supplies, offering improved efficiency and reduced noise by maintaining the lowest on-state resistance.

FDB3652-F085 is also commonly used in Li-powered systems, such as cell phones and tablets. Li-powered systems seeks for minimum power loss and require the switching frequency to be increased. FDB3652-F085 can provide more efficient power control in those systems.

Working Principle

MOSFETs are known to be “voltage-controlled” semiconductor devices. It means that when the voltage between its gate and its source is lower than the threshold voltage (VTH), the channel connecting the source and the drain will be turned on and current flows through it. The ratio between the voltage applied to the gate and the current passing through the channel is termed as transconductance.

FDB3652-F085 is a Logic Level Power MOSFET. Its gate-source breakdown voltage is very low, due to the special client coating process. This indicates that voltage units as low as 3.3V can be used to turn on the gate. The low gate threshold voltage combined with the highly enhanced gate insulation layer allows FDB3652-F085 to operate with greater power efficiency.

Because of its unique features, FDB3652-F085 can switch up to 5A continuously with a low on-state resistance. The maximum power dissipation and the RDS(on) ratings are largely affected by the operating temperature and other external conditions.

Conclusion

FDB3652-f085 is an ideal choice for DC low- and high-side switching, as it can provide maximum power efficiency and low on-state resistance. Its low gate-source threshold voltage allows relatively low input voltage and high switching speed. It is widely used in power management and Li-powered systems.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDB3" Included word is 13
Part Number Manufacturer Price Quantity Description
FDB3672 ON Semicondu... -- 1000 MOSFET N-CH 100V 44A D2PA...
FDB3860 ON Semicondu... -- 1000 MOSFET N-CH 100V 6.4A D2P...
FDB3632_SB82115 ON Semicondu... 0.0 $ 1000 INTEGRATED CIRCUITN-Chann...
FDB3632-F085 ON Semicondu... 1.53 $ 1000 MOSFET N-CH 100V 12A D2PA...
FDB3652 ON Semicondu... -- 1000 MOSFET N-CH 100V 61A TO-2...
FDB38N30U ON Semicondu... -- 1000 MOSFET N CH 300V 38A D2PA...
FDB390N15A ON Semicondu... -- 800 MOSFET N-CH 150V 27A D2PA...
FDB3672-F085 ON Semicondu... 0.81 $ 1000 MOSFET N-CH 100V 44A D2PA...
FDB3682 ON Semicondu... -- 800 MOSFET N-CH 100V 6A TO-26...
FDB3502 ON Semicondu... -- 800 MOSFET N-CH 75V 6A TO-263...
FDB33N25TM ON Semicondu... -- 4 MOSFET N-CH 250V 33A D2PA...
FDB3632 ON Semicondu... -- 10 MOSFET N-CH 100V 80A D2PA...
FDB3652-F085 ON Semicondu... 1.16 $ 1000 MOSFET N-CH 100V 61A D2PA...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics