FDB3632 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D²PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	310W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	9 mOhm @ 80A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta), 80A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDB3632 single power MOSFET is one of the most versatile and widely used transistor devices in the semiconductor industry. It is a type of semiconductor device that combines the benefits of a field-effect transistor with the advantages of a bipolar-junction transistor. The FDB3632 is a high-quality and reliable power MOSFET that can handle a wide range of load current and voltage levels, making it an ideal choice for applications ranging from motor control, power regulators, and power conversion, to switch mode power supplies and audio switching.The FDB3632 is a P-channel enhancement-mode power MOSFET designed to provide a high level of power and efficiency in applications where low on-state resistance and low gate threshold voltage are desirable. It features a maximum drain to source breakdown voltage of 37V with a continuous drain current of 20A, making it well suited for variable speed motor applications, automotive and audio applications and for other applications requiring high current drive.The working principle of the FDB3632 is based on the same principle as a Field Effect Transistor (FET). It consists of a source, a drain, and a gate. The source and drain are both connected to a voltage supply, while the gate is connected to a control signal. The device operates as a switch which controls the flow of current between the source and drain.When the gate is connected to a low voltage, the FDB3632 is OFF. This is because the gate voltage is not strong enough to overcome the negative charge of the P-channel’s depletion layer, and therefore, no current flows between the source and drain. However, when the gate voltage is increased to a high level, the negative charge of the depletion layer is overcome and the device is “turned on”, allowing current to flow between the source and drain. This is the basic function of the FDB3632.The FDB3632 is an ideal choice for many high-performance applications. It features an exceptionally low on-state resistance of 0.0003Ω combined with optimal thermal performance and a wide temperature operating range. It is also designed for compatibility with low impedance gate drives. The FDB3632 is also capable of handling high junction temperatures, making it highly suitable for systems with high power dissipation.The applications of the FDB3632 include various motor control applications, power factor correction, power supplies, and audio switching. The device is also used in automotive applications such as ignition, lighting, and control systems. The FDB3632’s exceptionally low on-state resistance combined with its capability to handle high power levels make it ideal for audio switching applications.In conclusion, the FDB3632 is one of the most popular and widely-used single power MOSFETs available in the semiconductor industry. It is an efficient and reliable device that is capable of handling a wide range of current and voltage levels with minimal power dissipation. Its low on-state resistance combined with its wide temperature operating range make it an ideal choice for high-performance applications. It is appropriate for use in applications such as motor control, power factor correction, power conversion, and audio switching.

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