FDB390N15A Allicdata Electronics

FDB390N15A Discrete Semiconductor Products

Allicdata Part #:

FDB390N15ATR-ND

Manufacturer Part#:

FDB390N15A

Price: $ 0.69
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 27A D2PAK
More Detail: N-Channel 150V 27A (Tc) 75W (Tc) Surface Mount D²P...
DataSheet: FDB390N15A datasheetFDB390N15A Datasheet/PDF
Quantity: 800
1 +: $ 0.69000
10 +: $ 0.66930
100 +: $ 0.65550
1000 +: $ 0.64170
10000 +: $ 0.62100
Stock 800Can Ship Immediately
$ 0.69
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 75W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDB390N15A is a type of field-effect transistor (FET) specially designed to provide superior performance in power electronics applications. This type of FET is a single N-channel MOSFET which is capable of delivering current gains up to 160V and 1.1A at 100V. FDB390N15A is widely used in modern electronic applications such as solar inverters, home appliances, and power supplies.

A field effect transistor or FET works on the principle of voltage control of drain current. When a voltage is applied to the gate terminal, it creates an electrical field between the gate and the drain, which in turn alters the conductivity of the channel connecting the source and the drain. This change in conductivity allows the current to flow from the source to the drain.

FDB390N15A features low static drain-source on-resistance from 75 mΩ to 300 mΩ depending on voltage. This makes it ideal for high-speed switching applications. It also offers a low drain-source threshold voltage (VGS(th)) of 2V, ensuring reliable switching even at high-voltage levels. FDB390N15A also has a very low output capacitance which makes it suitable for fast switching or pulse applications.

FDB390N15A’s low internal capacitance and high transconductance makes it ideal for high-performance analog or digital circuits. It can be used to drive capacitive or inductive loads, making it ideal for use in switch mode power supplies, amplifiers, and DC-DC converters. Besides, its low gate-drain charge makes it suitable for high-frequency applications.

Apart from the above features, FDB390N15A is highly reliable and provides excellent thermal performance. Its excellent mechanical stability and packaging make it suitable for use in both commercial and military applications. FDB390N15A is available in both through-hole and surface mount packages and is RoHS compliant for its lead-free manufacturing process.

In conclusion, FDB390N15A is a highly versatile and reliable FET for power electronics applications. Its superior performance and reliability make it suitable for a wide range of applications from solar inverters to high-frequency switching circuits. The low static drain-source on-resistance, low drain-source threshold voltage, and excellent thermal performance make it the ideal choice for quality power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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