FDB3672-F085 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDB3672-F085 is a type of field-effect transistor (FET), which belongs to a family of transistors called metal-oxide semiconductor FETs (MOSFET). FDB3672-F085 is a single FET, meaning it is made up of just one active transistor, rather than multiple active transistors as with multi-gate FETs. The FDB3672-F085 is a p-channel (positive channel) device, meaning it allows positive conduction of current through the source to the drain while being supported by a positive voltage supply. The device contains a parasitic junction or gate oxide which helps to further separate the source and drain, while allowing positive conduction in between. The FDB3672-F085 is designed primarily for low-current, low-power logic level applications. Additionally, it is suitable for use with digital logic families such as NMOS and CMOS.

The FDB3672-F085 utilizes a planar, self-aligned (SAL) process in order to minimize on-resistance and gate charge. This feature is critical for high-level signal applications as it ensures fast switching speeds and higher efficiency. The device features low gate charge and drain current levels, which make it suitable for high parameter stability and low noise applications. The FDB3672-F085 is available in quad and tri packages, allowing for greater installation flexibility and easier integration into existing systems. Additionally, the device features a maximum operating temperature of 150°C and can withstand voltages up to 41V.

The FDB3672-F085 is designed with a static drain-to-source resistance (RDS (on)) of 30mΩ. This makes the device particularly suitable for low-power logic level applications, as it ensures efficient energy usage and reduces thermal dissipation. In addition, its low resistance allows for a higher switching frequency. When used in high-frequency applications, the FDB3672-F085 is able to switch frequencies up to 200MHz.

The FDB3672-F085 is also designed with an increased channel-length modulation (CLM) capability. The device features a maximum CLM of 80mV/V, which is higher than many other MOSFETs and allows for improved electrical characteristics and faster switching times. The device also incorporates many other features such as a minimum gate to source voltage (VGS) of -5V, gate to drain voltage (VGT) of -3.3V, and gate capacitance (Cgt) of 8.2pF.

In conclusion, the FDB3672-F085 is a p-channel MOSFET suitable for a variety of low current low power logic level applications. The device features low resistance and high channel length modulation, making it particularly suitable for high-frequency, low-noise applications. Furthermore, due to its low gate charge, thermal dissipation and parameter stability, it offers wide array of installation flexibility and easier integration into existing systems.

The specific data is subject to PDF, and the above content is for reference