FDB3632_SB82115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDB3632_SB82115 is a MOSFET that is commonly used in a variety of power management applications. It is an enhancement-mode N-channel MOSFET that is optimized for low-power applications. The part is rated at +12V and offers a high currentSource/Drain capacitance. It is also a high-side switch that can be used in high-voltage applications, such as motor drive circuits.

The FDB3632_SB82115 is designed for high-voltage applications as well as for use in low-voltage applications. It has an on-state resistance (RDS(on)) of just 0.026Ω and a breakdown voltage of 200V. This makes it an ideal choice for applications that require low RDS(on) and high voltage. Additionally, the part has very low gate threshold voltage (VGS), meaning it has little to no gate drive current requirement. This in turn allows for effective gate switching even with low gate voltage.

The FDB3632_SB82115 can be utilized for a variety of applications, such as motor drive circuits and voltage regulator circuits. In motor drive circuits, the part can be used as a high-side switch to quickly and accurately control the speed and direction of a motor. For example, it can be used to drive a PWM signal to quickly increase or decrease the speed of a motor. In voltage regulator circuits, the part can be used as a low-side switch to efficiently regulate the voltage across a load.

The working principle of the FDB3632_SB82115 is rooted in the science of voltage divider circuits. In a voltage divider, when the input voltage is applied, the output voltage will be divided across the resistance of the FET, resulting in a reduced voltage. This is known as voltage division; the FDB3632_SB82115 works in much the same way, except it controls the resistance of the FET by adjusting the gate voltage.

When the gate voltage is increased, it creates an electric field in the channel of the FET, which in turn increases the resistance of the FET. This allows more voltage to be dropped across the FET, resulting in a higher output voltage. Similarly, when the gate voltage is decreased, the electric field is reduced, which results in a decreased resistance of the FET and a lower output voltage.

The FDB3632_SB82115 is a versatile device that can be used for a variety of applications. Its low RDS(on) and high-voltage rating make it an ideal choice for high-voltage applications, while its low gate threshold voltage reduces gate drive current requirements. Additionally, its efficient voltage-divider operation allows for fast and accurate control of the output voltage. Together, these features make the FDB3632_SB82115 a great choice for power management applications.

The specific data is subject to PDF, and the above content is for reference