FDMS3660AS

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The FDMS3660AS is an array of N-channel MOSFETs that has been designed for a variety of applications. This device is capable of delivering a high current (up to 40A) and high voltage (up to 45V) with an on-resistance of 7.5 mΩ. The FDMS3660AS is also well-suited for low-noise, low-power operation.

The FDMS3660AS consists of four N-channel MOSFETs with gate to source voltages up to 45V, drain to source voltages up to 75V, and source to drain currents up to 40 A. All the devices are connected in parallel with the source pins connected together and the gate pins connected together. This allows the devices to act as an array of transistors with one gate pin and one source pin.

The FDMS3660AS can be used in various applications, such as dc-to-dc converters, battery-powered electronics, motor control, and other high-power applications. The device has the capability to provide extremely low gate threshold voltages and low on-resistance for superior efficiency in these applications. As the device is self-protected against short circuit, over-temperature, and over-voltage conditions, it can also operate reliable in harsh environments and extreme temperatures.

The working principle of the FDMS3660AS is as follows. When a positive gate voltage is applied to the device, the electrons are repelled from the gate and drawn towards the drain, creating a current flow from source to drain. This current flow is dependent upon the drain to source voltage and is typically rated at up to 40A in the case of the FDMS3660AS.

The FDMS3660AS is highly efficient and has been designed to provide superior performance in a variety of power applications. The device is extremely reliable and offers the capability to operate in harsh environments. With its high current and voltage capabilities and low on-resistance, the FDMS3660AS is well-suited for applications needing high current and voltage, and low noise and power consumption.

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