| Allicdata Part #: | FDMS9410-F085TR-ND |
| Manufacturer Part#: |
FDMS9410-F085 |
| Price: | $ 0.39 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 50A 8PQFN |
| More Detail: | N-Channel 40V 50A (Tc) 75W (Tj) Surface Mount Powe... |
| DataSheet: | FDMS9410-F085 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.39000 |
| 10 +: | $ 0.37830 |
| 100 +: | $ 0.37050 |
| 1000 +: | $ 0.36270 |
| 10000 +: | $ 0.35100 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | Power56 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 75W (Tj) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1790pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
| Series: | Automotive, AEC-Q101, PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tape & Reel (TR) |
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The FDMS9410-F085 is a type of single MOSFET, or Metal Oxide Semiconductor Field Effect Transistor (MOSFET). As a single MOSFET, the FDMS9410-F085 is a field-effect transistor, which uses MOSCap process to achieve a wide range of various low-power and high-performance applications. The FDMS9410-F085 is ideal for applications such as memory, switching, drivers and backplanes in telecom and datacom environment.
The FDMS9410-F085 is composed of a few main components, including a body diode, a drain and source terminal and a gate terminal. It also contains a MOSFET channel, which is composed of two channels, each polarized in a different direction. The gate terminal of the FDMS9410-F085 is where the control voltage is applied, determining the state of the MOSFET. When a gate voltage is applied, it controls how much current will flow through the leakage channel. The drain and source terminal is where the current proper to the MOSFET will flow when it is activated and the body diode can be used to protect the MOSFET by design when it is activated.
The FDMS9410-F085 operating principle is based on the effective mobility of the electrons in the MOSFET’s channel. The gate voltage controls the level of the electron mobility in the FDMS9410-F085 \'s channel. When the gate voltage is raised above a certain threshold voltage, the electrons are able to effectively move in the MOSFET’s channel, thus allowing current to flow through it. The drain and source terminals have different potentials which cause the electrons to move from source to the drain in a constant stream, allowing current to flow through the MOSFET. The body diode can also be used to protect the MOSFET when it is activated.
MOSFETs such as the FDMS9410-F085 are used in a variety of applications due to their low power, high performance and high frequency capabilities. One of the most common uses of the FDMS9410-F085 is in power management circuits, as it can optimize power delivery to the system, both in terms of efficiency and cost. They are also used in mobile devices and other power hungry applications such as automotive, robots, medical and industrial equipment.
The FDMS9410-F085 is also suitable for applications in the automotive market due to its fast switching speeds. It is used to control the engine\'s power delivery, reducing the amount of time it takes for the engine to respond to commands. It also helps maximize fuel efficiency as well as minimize exhaust pollution. Additionally, the FDMS9410-F085 is often used in robot power control circuits, helping optimize the robot\'s operation and help it move in accurate and smooth motion.
The FDMS9410-F085 is a type of single MOSFET, which can be used in a variety of applications. It is composed of a body diode, a gate terminal, a drain and source terminal, and a MOSFET channel which is composed of two channels, each polarized in a different direction. The FDMS9410-F085 operating principle is based on the level of electron mobility in the MOSFET\'s channel, which is controlled by the gate voltage. This single MOSFET is widely used in applications such as memory, switching, drivers, backplanes in telecom and datacom environment as well as in power management circuits and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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FDMS9410-F085 Datasheet/PDF