| Allicdata Part #: | FDMS8460TR-ND |
| Manufacturer Part#: |
FDMS8460 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 40V 25A POWER56 |
| More Detail: | N-Channel 40V 25A (Ta), 49A (Tc) 2.5W (Ta), 104W (... |
| DataSheet: | FDMS8460 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 104W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 7205pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 49A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The FDMS8460 is a single P-channel enhancement-mode power field-effect transistor (FET). It is designed for use as a load switch or in applications where high side switching is needed. The FET is a 30V, 10A rated device with a low rDS(ON). FETs are three terminal devices with gate, drain and source. This article will discuss the application field and working principle of the FDMS8460.
The application areas that are best suited for the FDMS8460 are automotive, consumer, industrial, medical, and portable/mobile. In automotive, the FET can be used to switch large currents, allowing a small signal to control a large, high voltage load. In consumer applications, the FET can be used for motor control, lamp control, and various other load switching applications. In industrial, the FET is a good choice for applications requiring high side switching, such as power conversion, motor control, and protection circuit applications. The FET can also be used in medical applications to switch large loads and control devices. The FDMS8460 is also a good choice for battery powered applications, such as mobile phones, PDAs, digital cameras, and so on.
The FDMS8460 consists of a P-type substrate and a single N-type MOSFET. It is designed to be used in applications that require the ability to switch high power with a low off-state resistance (<25mΩ). The FET contains an N-channel depletion-mode MOSFET which is controlled by the gate voltage. The FET has a voltage rating of 30V, a continuous drain current of 10A, and an on-state resistance of 25mΩ. The FET is available in the SOT-223 package and the TO-220AB package.
The working principle of an FET is based on the fact that the voltage applied to the gate terminal affects the conductivity of the channel region between the drain and the source. When a positive gate voltage is applied, a depletion region is created in the semiconductor channel, which effectively acts as a resistor between the drain and the source. This increases the resistance and inhibits current flow. When a negative voltage is applied, the depletion region is eliminated and current is allowed to flow freely. This is known as the enhancement-mode FET operation.
The FDMS8460 is an ideal choice for applications requiring high current switching, such as motor control, load switching, and protection circuit applications. The FET has a low on-state resistance, allowing for high efficiency operation. The FET can also handle high voltage, up to 30V, allowing it to be used in a wide range of applications. The FDMS8460 is a robust device, providing excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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FDMS8460 Datasheet/PDF