
FDMS8888 Discrete Semiconductor Products |
|
Allicdata Part #: | FDMS8888TR-ND |
Manufacturer Part#: |
FDMS8888 |
Price: | $ 0.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 13.5A 8-PQFN |
More Detail: | N-Channel 30V 13.5A (Ta), 21A (Tc) 2.5W (Ta), 42W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.12000 |
10 +: | $ 0.11640 |
100 +: | $ 0.11400 |
1000 +: | $ 0.11160 |
10000 +: | $ 0.10800 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1585pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 13.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 13.5A (Ta), 21A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS8888 is one of the most popular and well-known field effect transistor (FET) components, and it is used in different areas of electronics circuit applications. The device is a single-die FET (field effect transistor) with a floating gate, which allows for high-speed switching and low-power operation. As a general-purpose FET, it can be used for a wide range of applications, including switching, amplifying, voltage regulating, and even analog signal processing.
In its most basic form, an FDMS8888 consists of three elements: a source, drain, and gate. The source is the positive voltage lead. The drain is the negative voltage lead. And the gate is the connection between the source and the drain. In typical applications, the source is connected to the current source, the drain is connected to ground, and the gate is connected to the voltage supply.
The basic operating principle of the FDMS8888 is that when the gate receives a voltage, it creates an inversion layer below the oxide layer of the semiconductor material. When electrons pass through the inversion layer, they are attracted to the gate, which creates a rectangular field around the gate. This field is actually a basic transistor action, and when the voltage supply is applied, current can flow through the FET.
The FDMS8888 can be used in a wide range of applications. One of the most common applications is as a switch. The device works as a switch because when a voltage is applied to the gate, the field that is created will either switch on or off. When the field is on, current will flow between the source and the drain, and when the field is off, current will not flow. This action is usually used for controlling the speed of motors or for controlling a signal.
The FDMS8888 is also widely used as a voltage regulator. By controlling the voltage levels with the gate, the field created will regulate the flow of current. This is used in many different circuit applications, such as battery chargers, voltage regulators, and voltage converters. In addition, the device can be used as an amplifying element, as it is able to boost up the strength of a signal. This is commonly used in audio systems, for example.
The FDMS8888 can also be used in analog signal processing. By applying varying voltages to the gate, it is possible to create different patterns for the current flowing between the source and the drain. This is often used for digital signal processing, where a complex signal can be handled in a simpler way. By manipulating the voltage levels, the device can distort the signal, or filter out certain frequencies to get the desired output.
In summary, the FDMS8888 is an incredibly versatile field effect transistor device. As a single-die, it can be used in all sorts of applications, ranging from switching and amplifying to analog signal processing. By controlling the levels of voltage with the gate, the device can either switch on or off, regulate the flow of current, or manipulate the analog signal.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDMS7650 | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V POWER56N-... |
FDMS86350ET80 | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 80A POWER... |
FDMS3620S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 25V 17.5A/38... |
FDMS86300 | ON Semicondu... | -- | 15000 | MOSFET N-CH 80V 19A POWER... |
FDMS86322 | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 60A LL PO... |
FDMS3669S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 13A/18A ... |
FDMS7570S | ON Semicondu... | -- | 1000 | MOSFET N-CH 25V 28A POWER... |
FDMS86500DC | ON Semicondu... | -- | 1000 | MOSFET N CH 60V 29A 8-PQF... |
FDMS8350L | ON Semicondu... | 1.93 $ | 1000 | MOSFET N-CH 40V 47A 8PQFN... |
FDMS0312AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A PT8N-... |
FDMS0346 | ON Semicondu... | -- | 1000 | INTEGRATED CIRCUIT |
FDMS7670AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V SYNCFET P... |
FDMS7656AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V POWER56N-... |
FDMS0309AS_SN00347 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CHN-Channel 30V ... |
FDMS9409L-F085 | ON Semicondu... | 0.5 $ | 1000 | NMOS PWR56 40V 2.8 MOHMN-... |
FDMS3006SDC | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 34A 8-PQF... |
FDMS9410-F085 | ON Semicondu... | 0.39 $ | 1000 | MOSFET N-CH 40V 50A 8PQFN... |
FDMS5672 | ON Semicondu... | -- | 2992 | MOSFET N-CH 60V 10.6A POW... |
FDMS86150 | ON Semicondu... | -- | 1000 | MOSFET N CH 100V 16A POWE... |
FDMS86520 | ON Semicondu... | -- | 6000 | MOSFET N-CH 60V 14A 8-PQF... |
FDMS86103L | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 12A POWE... |
FDMS2D4N03S | ON Semicondu... | 0.48 $ | 1000 | MOSFET N-CH 30V 163A 8PQF... |
FDMS3664S | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 30V 13A/25A ... |
FDMS8320L | ON Semicondu... | -- | 1000 | MOSFET N-CH 40V 36A 8-PQF... |
FDMS86550ET60 | ON Semicondu... | 1.38 $ | 1000 | MOSFET N-CH 60V POWER56N-... |
FDMS8090 | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 100V 10A PWR... |
FDMS8023S | ON Semicondu... | -- | 3000 | MOSFET N-CH 30V POWER56N-... |
FDMS86202 | ON Semicondu... | -- | 1000 | MOSFET N-CH 120V 8MLPN-Ch... |
FDMS86150ET100 | ON Semicondu... | 1.51 $ | 1000 | MOSFET N-CH 100V 16A POWE... |
FDMS9411L-F085 | ON Semicondu... | 0.33 $ | 1000 | MOSFET NCH 40V 30A POWER5... |
FDMS8095AC | ON Semicondu... | -- | 1000 | MOSFET N/P-CH 150V 6.2A/1... |
FDMS7694 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V POWER56N-... |
FDMS86201 | ON Semicondu... | -- | 9000 | MOSFET N-CH 120V POWER56N... |
FDMS86310 | ON Semicondu... | -- | 1000 | MOSFET N-CH 80V 17A 8-PQF... |
FDMS8672S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 17A POWER... |
FDMS8692 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 12A POWER... |
FDMS0308AS | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 24A PT8N-... |
FDMS5362L-F085 | ON Semicondu... | 0.26 $ | 1000 | MOSFET N-CH 60V 17.6A POW... |
FDMS7650DC | ON Semicondu... | 1.15 $ | 3000 | MOSFET N-CH 30V 47A POWER... |
FDMS0300S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 31AN-Chan... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
