FDMS9410L-F085

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	Power56
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	75W (Tj)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1960pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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IntroductionFDMS9410L-F085 is a high-performance, FET-based, low-on-resistance, single-gate MOSFET (Metal Oxide Semiconductor Field Effect Transistor). As a single-gate transistor, it serves a variety of electronic applications. This paper will discuss the application field and working principle of the FDMS9410L-F085.Application FieldThe FDMS9410L-F085 is designed to improve the performance of switching applications. It is suitable for very low-end and low-voltage applications, such as powering automotive electronics, LED lighting, security systems, and industrial lighting.It is also suitable for use as a low-on-resistance switch in power regulation circuits. It is commonly used in voltage converters and DC-DC modules, as well as other power-saving applications.In addition, it can be used in low-voltage analog and digital system control applications, such as robotic systems, medical equipment, and remote control systems.Working PrincipleThe FDMS9410L-F085 is a single-gate transistor, meaning that it is composed of a single gate electrode, a source electrode, and a drain electrode. It is an FET-based transistor, where an insulated gate can be selectively controlled by a voltage applied to it, in order to control current through the source and drain.At low voltage, when the drain voltage is pulled up, the electric field between the gate and the source is changed, thus increasing the contact area between them. As a result, electrons move from the source to the drain, creating a low-resistance path, allowing current to flow. At higher voltage, the contact area between the gate and the source is decreased, thus reducing the current flow.In conclusion, the FDMS9410L-F085 is a single-gate MOSFET with low-on-resistance, designed for a variety of low-voltage, low-end applications. It works by controlling the electric field between the gate and the source, thus altering the contact area between them and allowing current to flow.

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