| Allicdata Part #: | FDMS7578TR-ND |
| Manufacturer Part#: |
FDMS7578 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 25V 17A POWER56 |
| More Detail: | N-Channel 25V 17A (Ta), 28A (Tc) 2.5W (Ta), 33W (T... |
| DataSheet: | FDMS7578 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | 8-PowerTDFN |
| Supplier Device Package: | 8-PQFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.5W (Ta), 33W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1625pF @ 13V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 28A (Tc) |
| Drain to Source Voltage (Vdss): | 25V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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FDMS7578 is a type of single-diffused MOSFET (Chronically Operating Transistor, or CMOS). It is used to provide low noise drive capabilities, with minimal power consumption, for a variety of power management applications.
A MOSFET, short for Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor which operates on the principle of carrier mobility. It is composed of an N-channel and P-channel, and has a low "on resistance" when compared to other ways of achieving the same type of switching. The MOSFET is a special type of electronic component which, when operated in the "on" state, allows a voltage to be applied to the device, resulting in a current being conducted. This current in turn controls the other devices or circuits to which the MOSFET is connected.
The FDMS7578 is a single-diffused MOSFET part, which differs from other CMOS devices because it uses a single-oxide layer (instead of a traditional double layer) to reduce the "on resistance" of the component. This makes the FDMS7578 an effective choice for use in power-intensive applications, such as automotive and industrial control systems, which require more accuracy and precision than traditional double-diffused MOSFETs can provide.
The FDMS7578 is specifically designed for low-noise and low-power drive applications, as its single-oxide layer provides a higher drive capability than other CMOS devices. This allows the device to provide a quieter and more efficient driving mechanism for applications such as switch-mode power supplies and high-speed logic circuits.
The FDMS7578 achieves low resistance and power consumption by using a single-oxide layer rather than the traditional double layer used in other CMOS devices. This has the advantage of reducing the size and power needed to drive the device, thus making it an attractive choice in applications where power savings are crucial.
In addition to its low power consumption, the FDMS7578 also offers a high degree of accuracy and precision in its performance. This is due to its single-oxide layer design, which results in minimal power loss, even at high frequency. This allows the device to operate reliably and accurately in various levels of drive demands.
In conclusion, the FDMS7578 is a single-diffused MOSFET part, designed specifically for low-noise and low-power drive applications. It features a single-oxide layer which allows for minimal power consumption, high accuracy and precision, and an overall reduction in the size and power needed to drive the device. This makes the FDMS7578 an attractive choice for a wide range of power management applications, from automotive and industrial control systems to switch-mode power supplies and high-speed logic circuits.
The specific data is subject to PDF, and the above content is for reference
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FDMS7578 Datasheet/PDF