FDMS8820

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The FDMS8820 from Fairchild Semiconductor is a single P-Channel Power Field Effect Transistor (PFET). This device is specifically intended to provide high linear current and low on-resistance with high integration density highlights. It is designed to match enhanced power supply designs with significant performance and reliability. The high level of performance and the single-package simplicity make the FDMS8820 attractive for a wide range of applications, including high-current DC/DC converters, voltage regulators, low-side gate drives, and power transistors.

The FDMS8820 provides a wide range of performance features. The on-resistance is member-controlled and ranges between 5 to 10Ω. It also includes an integrated dual-mode v-high low side (VHS-LHS) buffer with adjustable pullup, allowing for improved control of drain to source voltage. This device is equipped with a military-grade thermal shutdown and reverse-blocking protection. It also offers protection from electrostatic discharge (ESD) due to its high-performance on-chip capacitor.

The FDMS8820 is fabricated with a new high voltage process, created specifically for this device. This specialized process enables it to maintain high performance and reliability even when exposed to extreme temperatures, allowing for its optimal performance in a variety of applications. It is further enhanced by Fairchild’s advanced process technology, including proprietary passes across the material. This process results in accurate control of the device’s performance parameters.

In terms of operation, the FDMS8820 uses the typical FET topology with source, drain and gate terminals connected to the device. It is designed to operate from -55°C to +25°C (Tj). It can also be operated for short pulses up to 85°C (T a). At 25V (V D ) and 10mA (I D ), this device is capable of providing a maximum of 275 mA (I D,max ).

The most common application for this device is as an active pull down switch. It is most often used when a low R DS(ON) is needed, or when a high current-carrying capability is required. It can also be used as a low-side gate driver when the gate voltage needs to be controlled, such as in voltage regulator applications. Further, this device is often used to allow active pull down in the presence of high-on resistance, such as when controlling MOSFETs with high drain voltages.

The FDMS8820 has several advantages over other similar devices in its category. Firstly, due to its high integration density, it is capable of saving board space and cost compared to other FETs. Secondly, it also allows for easy switching, which saves time and increases system reliability. Finally, its military-grade thermal shutdown protection offers improved safety and optimization for designing high voltage power supplies.

In conclusion, the FDMS8820 from Fairchild Semiconductor is an efficient and reliable single P-channnel power FET with an impressive range of features and performance characteristics. Its high integration density makes it effective for a diverse range of applications, while its thermal shutdown and ESD protection provide a high level of safety and reliability. The FDMS8820 is an ideal choice for designing low-cost and high-performance power supplies that comply with military standards.

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