FDMS86182

Vgs(th) (Max) @ Id:	4V @ 150µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6), Power56
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2635pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 6V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	7.2 mOhm @ 28A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	78A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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FDMS86182 Application Field and Working Principle

The FDMS86182 is a dual N-channel enhancement mode power MOSFET specifically designed for low voltage, high speed switch mode applications such as laptop computers, LCD TVs, adapters, and other power application fields. It was developed to improve the reliability of power MOSFET devices, with reduced on-state resistance (RDS(ON), as well reduced input and output capacitance (CISS and COSS).

Overview of MOSFETs

A Metal Oxide Semiconductor FETs (MOSFETs) is a type of transistor used to control current and comes in either a n-channel or p-channel design. It is the most common type of transistor used in the electronics industry, due to its low cost and good performance. A MOSFET has three terminals, called the Gate, Source and Drain, each connecting to a different part of the circuit. The Gate terminal controls the flow of current, while the Source and Drain terminals allow current to flow through the MOSFET.

The FDMS86182 MOSFET

The FDMS86182 consists of two N-Channel MOSFETs contained in a single package. Each MOSFET has an RDS(on) of 0.9 mohm, a maximum drain-source voltage (VDS) of 60V, and a on-state resistance (RDS(on)) of 1 mohm. This MOSFET is rated for a maximum drain current (ID) of 6.4A and a maximum drain-source voltage (VDS) of 60V. It is designed specifically for low voltage, high speed switch mode applications such as laptop computers, LCD TVs, adapters, and other power applications.

FDMS86182 Working Principle

The working principle of the FDMS86182 MOSFET is fairly simple. When the Gate terminal is connected to the Source terminal, the MOSFET is in an “off” state, blocking any current flow through the channels. When the Gate and Source terminals are disconnected, the MOSFET is in an “on” state and allows current to flow through the channels. This is known as enhancement-mode operation, meaning that the MOSFET is “on” when the Gate voltage is greater than the source voltage.

FDMS86182 Applications

Due to its small size, low resistance, and low capacitance characteristics, the FDMS86182 is ideal for use in numerous applications, such as lighting dimmers, DC-DC converters, motor control applications, and many other power applications. This specific MOSFET is ideal for use in laptop computers and other electronic devices, due to its low voltage, low resistance, and low capacitance characteristics. Additionally, the MOSFET has a maximum drain current of 6.4A, making it suitable for a variety of current applications.

Conclusion

The FDMS86182 MOSFET is a dual N-channel enhancement mode power MOSFET specially designed for low voltage, high speed switch mode applications such as laptops, TVs, and adapters. Its low on-state resistance, low input and output capacitance, and maximum drain current of 6.4A make it suitable for a variety of applications including dimmers, motor control, and other power applications. The MOSFET’s simple functioning principle makes it a reliable choice for use in modern electronics.

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