FDMS86322 Allicdata Electronics
Allicdata Part #:

FDMS86322TR-ND

Manufacturer Part#:

FDMS86322

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 60A LL POWER56
More Detail: N-Channel 80V 13A (Ta), 60A (Tc) 2.5W (Ta), 104W (...
DataSheet: FDMS86322 datasheetFDMS86322 Datasheet/PDF
Quantity: 1000
1 +: $ 0.48000
10 +: $ 0.46560
100 +: $ 0.45600
1000 +: $ 0.44640
10000 +: $ 0.43200
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 50V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 7.65 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDMS86322 is a Power MOSFET (pMOSFET) designed to handle high power loads. It has a drain-source voltage rating of up to 80V which is suitable for automotive, industrial, and consumer applications. It also has a drain-source on resistance of only 0.85 ohms, making it highly efficient and reliable.

FDMS86322 Application Field

The FDMS86322 is primarily designed for use as a high-side power switch in automotive power systems. Some common applications include control and switching of the injector in a fuel injection system, spark timing control in an ignition system, and starting/stopping of an electric motor. It can also be used in consumer applications to switch on a power supply, control a lighting circuit, or provide an over-current protection circuit. Additionally, the pMOSFET can be used in various industrial applications, including motor control, machine tool control, and HVAC systems.

FDMS86322 Working Principle

The FDMS86322 operates on the principle of voltage control. When the voltage across the gate and source terminals is increased, the resistance between the drain and source terminals decreases. This reduces the amount of voltage and current that must pass through the load in order to operate. By using a voltage-controlled device such as a pMOSFET, the efficiency of the power system improves, and the overall current draw of the system decreases. Additionally, the FDMS86322 requires no external gate driver, making it easy to implement.

The body diode of the FDMS86322 can be used to provide reverse polarity protection, preventing unnecessary reverse currents from damaging the device and the power load. Additionally, the device can handle high surge currents, since it has a low gate threshold and low gate charge. This makes it suitable for a wide variety of applications, ranging from automotive to consumer and industrial applications.

The FDMS86322 device also has a high power rating, allowing it to provide a constant level of power to the load even during significant current surges. Additionally, the FDMS86322 has a built-in thermal shutdown feature, which is designed to protect the device from overheating and permanent damage. The device also has a low leakage current, which helps reduce power consumption when the device is in standby mode.

Conclusion

The FDMS86322 is a high-performance power MOSFET designed for use in high-power load applications. It has a drain-source voltage rating of up to 80V, a low on resistance of only 0.85 ohms, and can handle high surge currents. Additionally, it has a built-in body diode for reverse polarity protection, thermal shutoff protection, and a low leakage current. This makes the FDMS86322 suitable for use in automotive, consumer, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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