FDMS86163P

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The FDMS86163P is a single source/drain, part of Freescale Semiconductor\'s family of Advanced Power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor or APMOSFET) products. Its feature set includes enhanced RDS(on) performance, low gate charge (Qg), and low Miller capacitance (COSS). It is available in 2.9 V, 4.5 V, and 8.0 V logic-level thresholds and is compatible with both consumer and automotive applications.

Features

• N-channel
• Standard gate-charge
• Wide operating range
• super-junction technology with low RDS(on)
• 6V for consumer grade parts, 10V for automotive grade applications
• Operating temperature range of -55 to 155 °C

Applications

• DC/DC converters
• Switching voltage regulator
• Computer motherboards
• Power distribution systems
• Battery management circuits
• Power supplies
• Lighting applications
• General purpose switching.

Working Principle

TheMetal Oxide Semiconductor Field-Effect Transistor (MOSFET)is an essential active component used to switch electrical currents in integrated circuits. The FDMS86163P is a vertical channel MOSFET, making use of the APMOSFETtechnology developed by Freescale. It features a super-junction structure with precision-optimized vertical channel device regions that are tailored to minimize RDS(on).

This device has a positive voltage-controlled gate and a negative voltage-controlled drain. It works by controlling the current flow between the source and the drain with a variable gate voltage. When the gate voltage is low, a small electric field is created between the gate and the source which prevents electrons from flowing, effectively cutting off the current path. When a positive voltage is applied to the gate, the field increases, allowing electrons to pass through. The voltage level between the gate and the source can also be regulated, allowing for more fine-grained control over the device and current flow.

The FDMS86163P combines low on-resistance with a low gate charge, making it well suited for high-efficiency, low-noise applications. The low gate charge reduces power consumption and improves system response time, which in turn leads to improved overall efficiency. Furthermore, the low threshold voltage allows the FDMS86163P to be used in a wide variety of logic-level applications, making it an ideal choice for a wide range of consumer and automotive applications.

In summary, the FDMS86163P is a single source/drain MOSFET that combines low on-resistance and low gate charge with a wide operating range, making it suitable for a variety of applications, from DC/DC converters to computer motherboards. Its precision-optimized vertical channel device regions effectively minimize RDS(on) while its low threshold voltage helps reduce power consumption and improve system response time.

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