FDMS86350ET80 Discrete Semiconductor Products

The FDMS86350ET80 is a single-gate field-effect transistor (FET) designed for applications requiring high performance and low power consumption. It is part of the FDMS86000ET family of FETs from ON Semiconductor, and is designed as a low on-resistance integrated device for high-performance applications.

The FDMS86350ET80 has an N-channel design, pulsed current handling capability of up to 350mΩ, and a low gate charge. Its drain-source capability of 85V makes it ideally suited for applications where robustness and power handling are essential features. Its low gate charge means that it is better suited to fast switching applications, providing fast response and high currents.

The FDMS86350ET80’s single-gate configuration also makes it well suited to applications where power-saving is a priority. With a gate-to-source threshold voltage of 3.2V, this makes it capable of switching up quickly. The low gate charge also means that it can be turned on and off faster than comparable devices.

The FDMS86350ET80 is most commonly found in power-saving devices, such as LED drivers and inverters. It is also suited to a wide range of other applications, from remote switches to power controllers and LED display controllers. This device is mainly used in medical equipment, automotive systems, and industrial automation.

The FDMS86350ET80 works as an electrical switch, controlling the current flow between its drain and source terminals. It is built using a semiconductor substrate, usually silicon, and is designed in such a way that it conducts current in only one direction – from source to drain. It does this by controlling the amount of current flowing through it, which is based on its gate voltage.

The FDMS86350ET80 is an N-type FET, meaning that its gate voltage needs to be more negative than its source voltage in order to activate. This means that its gate-to-source threshold voltage should be 3.2V or less. Its on-resistance is characteristic of how much current it can handle at a given voltage. The higher the current, the lower the drain-source resistance.

The FDMS86350ET80 is a popular choice for applications where low power consumption, fast response, and robustness are key. Its single-gate configuration allows it to be used in a wide range of applications and provides the user with a simple, yet powerful, channel for current control. The device’s low drain-source resistance, low gate charge, and high rated current handling capability make it a great choice for power-saving applications.