Allicdata Part #: | FDMS7606TR-ND |
Manufacturer Part#: |
FDMS7606 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 30V 11.5A/12A PWR56 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 11.5A, 12A 1W ... |
DataSheet: | FDMS7606 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A, 12A |
Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
Power - Max: | 1W |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | Power56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDMS7606 is a dual N-channel Vertical DMOS FET array. It integrates two N-Channel FETs, one high-side FET and one low-side FET, in a small SOT23-6 package. The device is specified for an operating temperature range of -40°C to +125°C. The compact SOT23-6 package is designed for space-saving applications.
The FDMS7606 has a low Ron and low gate charge which makes it ideal for use in high-speed switching applications. The low gate charge allows for quick transient response time and provides lower switching losses. The low Ron ensures low power dissipation even at higher currents and higher temperatures, allowing it to handle tough thermal conditions. Additionally, the low Ron ensures low voltage drop and thus reduces the amount of energy consumed by the device.
The FDMS7606 also features a very low gate resistance, which effectively eliminates the need for an external gate-drive circuit, thus reducing the cost of the overall design. The FETs are internally connected in parallel, making the device suitable for higher current applications up to 3A.
The FDMS7606 features a vertical DMOS construction, which is beneficial in applications requiring high output current capability and low on-resistance. The vertical structure of the device enables it to provide higher output current and lower on-resistance than other comparable FETs. This makes it well-suited for synchronous buck applications, as well as DC-DC converters.
The FDMS7606 has an integrated charge pump circuit that helps to improve the FET turn-on and turn-off performance. The charge pump increases the gate drive voltage, which helps to reduce switching losses and thus improve efficiency. The device also features a soft-start circuit that helps to reduce in-rush current and instantaneous power consumption during start-up.
The FDMS7606 is an ideal choice for circuit designs where space and cost are at a premium. The device\'s small size and low cost make it well-suited for use in consumer electronics and consumer applications such as printers, photocopiers, and other embedded systems. Additionally, its robust design allows for a wide operating temperature range, making it suitable for industrial applications.
The specific data is subject to PDF, and the above content is for reference
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