Allicdata Part #: | FDMS8090TR-ND |
Manufacturer Part#: |
FDMS8090 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 100V 10A PWR56 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 100V 10A 2.2W Surf... |
DataSheet: | FDMS8090 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 10A |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 50V |
Power - Max: | 2.2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerWDFN |
Supplier Device Package: | 8-MLP (5x6), Power56 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDMS8090 is an array of Field-Effect Transistors (FETs) which have been specifically designed for use as switches or amplifiers in electronic systems. The array includes both N-Channel and P-Channel FETs, and also includes both metal-oxide semiconductor field-effect transistors (MOSFETs) and depletion-type MOSFETs. The FDMS8090 is manufactured using modern manufacturing techniques and provides the user with high reliability and performance.
Application Field
The FDMS8090 has a wide range of applications in electrical and electronic systems. Applications include:
- High frequency circuit switching
- High power switching
- Power control
- Analog circuit switching
- High current amplification
The FDMS8090 can also be used in power control applications such as controlling the speed of motors, adjusting the voltage of unregulated power supplies, and controlling the on/off states of various integrators.
Working principle
The FDMS8090 works on the principle of field-effect transistors (FETs). FETs are transistors that operate by controlling the flow of electric current through a channel created by a structure known as the “gate”. In the FDMS8090, the gate is either a metal-oxide semiconductor (MOSFET) or a depletion-type MOSFET. The gate controls the flow of current through the device by varying the potential between the drain and source of the transistor. By changing this potential, the user is able to control the current flow through the device.
The FDMS8090 is capable of providing good isolation between the power source and the device, as well as providing good thermal stability. The electronic devices using the FDM8090 are also highly reliable and require little maintenance. Furthermore, the FDMS8090 is compatible with a wide range of devices and can be used in various types of applications.
Conclusion
In conclusion, the FDMS8090 is a great choice for applications which require good performance and reliability. The FDMS8090 has a wide range of applications and can be used in both analog and digital circuits. The device can also provide good isolation between the power source and the device, as well as providing good thermal stability. The FDMS8090 is a great device for use in power control applications.
The specific data is subject to PDF, and the above content is for reference
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