Allicdata Part #: | FDPF4D5N10C-ND |
Manufacturer Part#: |
FDPF4D5N10C |
Price: | $ 2.56 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | FET ENGR DEV-NOT REL |
More Detail: | N-Channel 100V 128A (Tc) 2.4W (Ta), 37.5W (Tc) Thr... |
DataSheet: | FDPF4D5N10C Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.29800 |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.4W (Ta), 37.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5065pF @ 50V |
Vgs (Max): | ±20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 4V @ 310µA |
Rds On (Max) @ Id, Vgs: | 4.5 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 128A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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FDPF4D5N10C is a silicon n-channel enhancement mode power field effect transistor specifically developed for switching applications. This device is produced using Fairchild Semiconductor’s advanced line of high voltage technology.Features of FDPF4D5N10C includes internal gate protection to minimize gate stress, antistatic device for each field effect transistor and ultra low gate charge. It is widely used in switching, DC-DC converters, and all types of switching regulators.
Applications of FDPF4D5N10C
FDPF4D5N10C is widely used in various applications including:
- Switching applications
- DC-DC Converters
- Switching regulators
- Power management subsystems
- Digital Drive circuits
- Electronic city lights
- Automotive systems
Working Principle of FDPF4D5N10C
The FDPF4D5N10C is an enhancement mode N-channel power field effect transistor (FET) specifically designed for high frequency switching applications. It is constructed with a monolithic double poly silicon gate CMOS process using advanced technologies. The current is controlled and limited to a safe range through the drain-source pinch off region.
The FDPF4D5N10C has an internal enhancement mode gate structure and requires no gate voltage to be applied in order to turn on. An injected gate voltage greater than its threshold gate voltage will cause a channel between the gate and drain. A small amount of current will then flow through the source-drain path, with the magnitude of the current proportional to the gate voltage.
The FDPF4D5N10C has an integrated protection diode from gate to source, which prevents an excessive voltage from being applied. It also has an antistatic device for each field effect transistor to prevent damage to the gate, drain, or source.
The FDPF4D5N10C is reliable, efficient and easy to use since it has an internal gate protection to minimize gate stress and ultra-low gate charge for a more efficient switching. It also has a wide range of operating temperatures and is available in both surface mount and through-hole form.
The specific data is subject to PDF, and the above content is for reference
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