Allicdata Part #: | FDPF2D3N10C-ND |
Manufacturer Part#: |
FDPF2D3N10C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 222A TO220F |
More Detail: | N-Channel 100V 222A (Tc) 45W (Tc) Through Hole TO-... |
DataSheet: | FDPF2D3N10C Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 152nC @ 10V |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 45W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11180pF @ 50V |
Vgs (Max): | ±20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 4V @ 700µA |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 222A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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FDPF2D3N10C is a widely used single-channel enhancement-mode FET (field effect transistor) manufactured by Fairchild Semiconductor. It belongs to the family of ultra small FD-SOI (fully depleted silicon-on-insulator) devices.
FDPF2D3N10C is widely used in digital consumer, network, and computing applications. It is used to provide an efficient on/off switch and to also control current or voltage flowing in a circuit.
The FDPF2D3N10C has an N-channel enhancement mode design. It is built with a number of transistors on a very small die size, allowing for low cost and low power consumption. Its operating voltage ranges from 0-100V, and the total gate capacitance is only 1.2pF. It also has a high gain bandwidth, which allows it to be used in high-frequency switching and amplifier applications.
The FDPF2D3N10C is an extremely reliable device, with a high common-mode rejection ratio and maximum operating temperature of 150°C. Its low RDS(ON) ensures fast switching times, which allows it to be used in applications that require very fast response times such as logic interfaces.
The working principle of FDPF2D3N10C is based on capacitive coupling. When a gate voltage greater than the threshold voltage is applied to the gate, electrons are injected into the channel, increasing the resistance and creating a conducting path between the source and drain. The magnitude of the current flowing through the device is determined by the voltage applied to the gate, with higher gate voltages producing higher currents.
FDPF2D3N10C is a versatile, reliable, and cost-effective FET. It is commonly used in a wide range of digital consumer, network, and computing applications. Its high gain bandwidth and low power consumption make it ideal for high-frequency switching and amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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