FDS7060N7 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDS7060N7 is an advanced transistor designed to provide superior performance in a variety of applications.

A transistor, or field-effect transistor (FET), is a semiconductor device consisting of three terminals, the source, gate and drain, controlled by a voltage or current. FETs are designed to act as a switch in circuits, allowing a current to flow between two terminals, while controlling the amount of current based on a voltage applied to the third terminal.

The FDS7060N7 is a single-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured on an advanced N7 process technology. The device is designed to provide superior performance in low- and high-side power switches as well as high-speed switching and logic applications.

The device features a drain-source voltage rating of up to 100 V and a breakdown voltage of 60 V. The FDS7060N7 also features an on-resistance of 0.65Ω and an adjustable gate threshold voltage from -2.5 V to -5.5 V. It offers excellent switching characteristics, with a fast switching speed of 1.8 ns and a switching on-time of 1.3 μs.

The FDS7060N7 is designed to provide superior performance in applications such as DC/DC converters, power management systems, low-side switch applications, high-side switch applications, logic applications, automotive applications and portable electronic devices.

The device features an integrated charge pump, which helps reduce the switch voltage and increase efficiency. The integrated charge pump eliminates the need for external components, such as an external capacitor and diode, while allowing the device to handle higher voltage operations.

The working principle of the FDS7060N7 is simple. This device has three terminals – the source, gate and drain. The source is connected to the power source, and the gate is connected to the control voltage or current. When a voltage or current is applied to the gate, this voltage or current causes the flow of electrons between the drain and the source, allowing current to flow.

In addition, the device is designed to provide excellent thermal performance, as it is rated for a maximum operating temperature of up to 175°C. The device also has a high-speed switching performance, with a 20ns switch turn-on time and a switching on-time of 1.3μs.

The FDS7060N7 is an advanced device offering excellent performance for a variety of applications, including DC/DC converters, power management systems, low-side switch applications, high-side switch applications, logic applications, automotive applications and portable electronic devices.

The specific data is subject to PDF, and the above content is for reference