FDS7064N Discrete Semiconductor Products |
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Allicdata Part #: | FDS7064NTR-ND |
Manufacturer Part#: |
FDS7064N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 16A 8-SOIC |
More Detail: | N-Channel 30V 16A (Ta) 3W (Ta) Surface Mount 8-SO |
DataSheet: | FDS7064N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3355pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 4.5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 16A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDS7064N is a wide voltage range N-channel enhancement-mode junction field effect transistor (JFET). It is an essential device used to vary the movement of electrons between the Source, Gate and Drain while providing protection to power semiconductor components. The FDS7064N offers users great flexibility in terms of high breakdown voltage and low on-state resistance in applications where low currents and high speed switching are a priority.
The FDS7064N offers users high input impedance and fast switching properties, making it a popular choice for applications such as voltage and current regulation, analog switching and signal processing. The device is also suitable for use in audio and RF amplifiers, residential power control, motor control, speed control and measurement systems.
The FDS7064N is capable of delivering up to 1 MeV/meter and can handle up to 25A, making it suitable for a variety of applications. The device is also capable of withstanding transients up to 5000V and can be used in either a single-ended or dual-ended configuration. The low gate charge associated with the FDS7064N allows it to be used in high-speed systems, while its high-frequency response enables it to be used in both high- and low-bandwidth applications.
The working principle of the FDS7064N relies on the variation of electron current between the Source, Gate and Drain. When a voltage is applied to the Gate, it sets up an electric field, which affects the current flow through the channel and changes the channel resistance. By controlling the Gate voltage, the current flow can be regulated, allowing the user to control the voltage and current levels of the device.
The FDS7064N is an advantageous device, offering users a wide voltage range, high breakdown voltage and low on-state resistance. Its ability to withstand transients and fast switching properties make it an ideal choice for a variety of applications, including voltage and current regulation, analog switching and signal processing, audio and RF amplifiers, residential power control, motor control, speed control and measurement systems.
The specific data is subject to PDF, and the above content is for reference
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