FDS7064SN3 Allicdata Electronics

FDS7064SN3 Discrete Semiconductor Products

Allicdata Part #:

FDS7064SN3TR-ND

Manufacturer Part#:

FDS7064SN3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 16A 8-SOIC
More Detail: N-Channel 30V 16A (Ta) 3.13W (Ta) Surface Mount 8-...
DataSheet: FDS7064SN3 datasheetFDS7064SN3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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TheFDS7064SN3 is a single N-channel enhancement MOSFET device manufactured by Fairchild Semiconductor. This single MOSFET features discrete P-type, N-type and MOSFET cores. It can operate at voltages ranging from 4V to 20V, making it a powerful and versatile solution for a variety of different application fields. In terms of performance, the FDS7064SN3 offers an RDS(ON) of 14 mΩ and an ID of drain current of 5.6A maximum. Additionally, this device offers a fast switching speed, low on-state resistance, low gate charge, high gate breakdown voltage and high operating temperature range.

The FDS7064SN3’s main application fields and working principle lies in digital logic circuits, lighting control, switching and power supplies. The MOSFETs gates are driven by a low voltage, digital signal. Depending on the voltage level of the channel of the gate, the MOSFET acts like an insulator or an open-circuit. When the voltage level at the channel of the gate is high, the device is turned on and current can flow in the body of the MOSFET. As long as the gate voltage is applied, the MOSFET will remain in the ‘on’ state and continue to conduct current. Similarly, when the voltage level at the channel of the gate is low, the device is turned off and current cannot flow in the body of the MOSFET. As the gate voltage decreases, the MOSFET will switch off and the current in the body of the MOSFET stops.

Advantages of the FDS7064SN3 include its minimal power dissipation when conducting current, which is due to its low forward voltage drop. This device also offers a strong breakdown voltage, meaning that the maximum voltage the device can withstand is higher than with other FETs. Additionally, due to its light weight, this device is ideal for implementation in high-frequency switching applications such as digital logic circuitry, amplifiers, push-pull circuits and various power supplies.

This MOSFET device offers increased flexibility for designers, with features such as its low on-state resistance, fast switching speed and high temperature range. Additionally, this device also features its own temperature protection, further increasing its reliability. With its ultra-low noise performance, the FDS7064SN3 is also capable of operation in a wide range of harsh environments, making it a great choice for applications such as in the automotive and medical industries.

In conclusion, the FDS7064SN3 is a powerful and multifunctional single N-channel enhancement MOSFET device. This device offers exceptional features and performance, making it suitable for a variety of different application fields such as digital logic circuits, lighting control, switching and power supplies. Additionally, its fast switching speed, low on-state resistance, low gate charge, high gate breakdown voltage and high temperature range are sure to provide any designer with an effective and reliable solution.

The specific data is subject to PDF, and the above content is for reference

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