Allicdata Part #: | FDS7066N3-ND |
Manufacturer Part#: |
FDS7066N3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 23A 8SOIC |
More Detail: | N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO |
DataSheet: | FDS7066N3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4973pF @ 15V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 23A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDS7066N3 is a high-performance, single N-channel TrenchMOS logic level field-effect transistor (FET). It provides enhanced energy efficiency and low gate charge for increased circuit efficiency and faster switching performance. It is designed for use in synchronous buck, resonant mode and hard-switching applications.
The FDS7066N3 is a family of transistors in which the center of the N-channel is formed from a TrenchMOS process. This process results in higher conductance between the source and the drain, enabling high-power applications. The FDS7066N3 also exhibits high maximum current and low minimum on-resistance. Its low gate capacity and low gate-to-source capacitance minimizes the drive and conduction losses.
The FDS7066N3 can be used in a wide range of applications, including power management circuits, audio and video switching, telecom and data communications, automotive, and consumer electronics. Because of its low on-resistance and high current capability, it is well-suited for many high-voltage applications, such as synchronous buck, resonant mode and hard-switching.
The FDS7066N3 works by the application of a small control voltage, or gate voltage, to the source terminal. When the gate voltage is applied, a channel between the source and the drain is created, allowing current to flow from the source to the drain. The amount of current that can flow through the FET depends on the voltage applied to the gate. This makes it an ideal device for use in power management circuits and other high-power applications, as it can easily be adjusted for desired current levels.
The FDS7066N3 has a robust design, and features improved ESD protection, temperature compensation and built-in protection circuits to ensure safety and reliability. It is also capable of operating at temperatures of up to 175℃, allowing it to be used in high-temperature environments.
Overall, the FDS7066N3 is an excellent choice for high-power applications. Its low on-resistance, high current capability and robust design make it an ideal solution for a wide range of applications. Its resistance to high temperatures and improved ESD protection make it an even better choice for situations when safety and reliability are of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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