FDS7788

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The FDS7788 is a manufacturable integrated circuit based on field-effect transistor (FET) technology. It is specifically designed as an n-channel MOSFET for use in commercial and industrial applications. By utilizing an advanced MOSFET architecture and structure, the device is able to provide reliable performance and low-power operation for use in robust and efficient circuits.

The FDS7788 is an enhancement-mode n-channel MOSFET, meaning that it requires an external voltage source to turn the device “on” and turn it “off”. This type of transistor is commonly referred to as an open drain or open source, and it is often used as a switch or amplifier in electronic circuits. Because it is an n-channel type, the FDS7788 utilizes the negative electrode (drain) of the transistor to control the flow of current through the device. When the external voltage is applied, it creates an electric field between the drain and the source, allowing current to flow. When the voltage is removed, the electric field dissipates, turning the device off. Due to its relatively low on-resistance, the FDS7788 can be used to control and switch large amounts of current in high-power applications.

The FDS7788 is typically used in applications such as audio amplifier circuits, automotive switching, and low-power motor control. It is also used in Bluetooth and wireless audio systems, as well as digital logic circuits. The device has a 20V breakdown voltage and a drain-source leakage current of only 20μA. This makes it suitable for use in low-power applications, as the device is able to maintain a constant drain-source voltage, even when the external voltage source is briefly removed. The device also boasts a low Gate-Source leakage current of 0.2nA, which further contributes to its efficient operation in low-power applications.

The FDS7788 is a versatile device that is capable of being used in a wide variety of applications. Its robust design and low power consumption make it a great choice for commercial and industrial applications. With its advanced architecture and structure, it is able to provide reliable performance and low power operation, making it an ideal choice for use in robust and efficient circuits.

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