FDS7764S

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FDS7764S transistor is classified as a single MOSFET - Field Effect Transistor, whose application field and working principle must be understood for proper use. This transistor is a four-terminal device that incorporates two breakdown diodes with an internal body diode for improved device robustness and simplification of circuit design.

The four terminals of the FDS7764S are the gate/drain Source (G-D-S) terminals. The Gate terminal is connected to a metal or plastic gate surrounded by a gate oxide layer. This Oxide Layer works as the insulating layer and enables the current to flow through the FET when positive or negative bias is applied. The Source Terminal is connected to the metal source that forms the conduction channel between the drain and the source, while the Drain terminal is connected to the drain control current.

The FDS7764S is generally used in various switch mode power supply (SMPS) by controlling the voltage between the gate and the source to provide the switch action. This transistor is widely used for frequency conversion and current adjustment in the converters because of its low on-resistance, low thermal undershoot, improved breakdown voltage ratings and wide range of gate drive voltage. Additionally, in the SMPS, this transistor works as a diodes to protect the power devices from any reverse current flow.

When working with the FDS7764S, the gate voltage must be controlled to provide the switch action between the drain and the source terminals and to ensure that the on-state resistance is low. The on- and off-state resistance of the FET depends largely on the voltage applied to the gate. Therefore, a very low gate voltage is required to ensure the switch is off and to reach the desired low on-state resistance. The FDS7764S is a high-power transistor and is able to withstand high current, making it ideal for switch mode power supply applications.

The Fowler-Nordheim Tunneling is the main working principle behind the FDS7764S. This tunneling works on the basis of the transfer of electrons through a thin oxide barrier which is present between the gate and the drain terminals. This charge transfer occurs only when a minimum electric field is present. Hence, the electric field creates an additional channel for electrons to flow between the two metal electrodes, which lowers the drain current and turns the switch off.

In conclusion, the FDS7764S is a high power single metal oxide semiconductor field effect transistor that is widely used for SMPSs due to its low on-resistance, low thermal undershoot and improved breakdown voltage ratings. It works on the basis of the Fowler-Nordheim Tunneling principle which enables the transfer of electrons through a thin oxide layer that is present between the gate and the drain terminals.

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