FDS7066N7 Allicdata Electronics

FDS7066N7 Discrete Semiconductor Products

Allicdata Part #:

FDS7066N7TR-ND

Manufacturer Part#:

FDS7066N7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 23A 8-SOIC
More Detail: N-Channel 30V 23A (Ta) 3W (Ta) Surface Mount 8-SO
DataSheet: FDS7066N7 datasheetFDS7066N7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4973pF @ 15V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 5V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS7066N7 belongs to a type of transistor called a field-effect transistor (FET) and is a single MOSFET. FETs are types of transistors which are commonly used for switching and amplification purposes. They are able to function as a voltage-dependent switch since they are able to control the electrical current based on the gate voltage.

The FDS7066N7 is a vertical double-diffused n-channel MOSFET. This means that it has two p-n junctions, one between the body and the drain, and one between the body and the source. This also means that it is a symmetrical device, meaning that the characteristics of the device are the same regardless of which terminal is used as the drain or the source.

The FDS7066N7 is a MOSFET that has been optimized so that it offers both high efficiency and excellent power capability. It is able to offer improved power capabilities due to its high efficiency and its low thermal resistance, which is beneficial for minimizing heat dissipation. This makes it ideal for use in applications such as high power amplifiers or power supplies.

The FDS7066N7 also features a lower on-state resistance compared to traditional MOSFETs, which improves its switching speed and reduces power losses. It can handle up to 30V drain-to-source voltage, and its maximum continuous drain current is rated at 63A. This makes it suitable for use in high current switching applications.

The working principle of the FDS7066N7 involves passing electric current through it from the drain to the source. The current passing through the device is controlled by the gate voltage. When a positive voltage is applied to the gate, then the current increases, and when a negative voltage is applied, then the current is decreased. This makes the FDS7066N7 an ideal component for controlling the flow of current in applications where high currents are involved, such as power supplies or motor controllers.

In summary, the FDS7066N7 is a vertical double-diffused n-channel MOSFET. It is ideal for use in applications where high power capabilities and efficiency is required, such as high power amplifiers and power supplies. Its lower on-state resistance enables high switching speeds and low power losses, making it suitable for use in high current switching applications. The FDS7066N7 works by controlling the current through it based on the gate voltage.

The specific data is subject to PDF, and the above content is for reference

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