Allicdata Part #: | FDS7779Z-ND |
Manufacturer Part#: |
FDS7779Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 30V 16A 8SOIC |
More Detail: | P-Channel 30V 16A (Ta) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | FDS7779Z Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 15V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 16A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDS7779Z is a type of single-channel field effect transistor, also known as a metal-oxide-semiconductor field-effect transistor (MOSFET). It is constructed from a source and drain, a gate, and an insulated gate dielectric. FDS7779Z is categorized by gate-source electrical slew rating, meaning it has an extremely fast switching time. FDS7779Z has the capability to generate a very fast electrical current at high frequencies and requires very low power, making it an ideal choice for use in a variety of applications.
In general, FDS7779Z is designed for use in both digital and analog circuits. In digital circuits, FDS7779Z can provide data, power, and control signals. It is used as a switch in order to turn on and off various electrical components. In analog circuits, FDS7779Z can be used to modulate signals, provide gain, or generate signals at various frequencies.
FDS7779Z is particularly useful for power switching applications due to its fast switching time and low power requirements. It is used in motor control circuits, motor drivers, LED drivers, DC-DC converters, and power supplies. It is an ideal choice for switching high current, high voltage, and high frequency signals. Additionally, FDS7779Z can be used in high-reliability and high-temperature environments due to its excellent reliability and thermal stability.
The working principle of FDS7779Z is relatively simple. The gate is charged with a specific voltage, which causes a channel of electrons to open up between the source and the drain. This electron channel can be modulated in order to control the flow of current between the source and the drain. The amount of current flowing through the channel is dependent on the strength of the voltage applied to the gate, as well as the type of material used to construct the device.
When FDS7779Z is used in a circuit, the gate of the device is connected to an external switch, such as a switch connected to a microcontroller or other control device. By controlling the gate voltage, the current flow through the source and drain can be modulated in order to achieve the desired current flow. This type of transistor is also known as a voltage-controlled device. Since FDS7779Z has extremely fast switching times and can control large amounts of current, it is highly useful in many applications.
FDS7779Z is an invaluable tool for designers in a variety of industries and applications. With its exceptionally fast switching times, low power requirements, and high Reliability, it is an ideal choice for various power switching, motor control, and other applications that require fast current control and high precision.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDS7788 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A 8-SOI... |
FDS7760A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
FDS7764A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
FDS7764S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13.5A 8SO... |
FDS7098N3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A 8SOIC... |
FDS7296N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8SOIC... |
FDS7066N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8SOIC... |
FDS7088SN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8SOIC... |
FDS7779Z | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 16A 8SOIC... |
FDS7060N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 19A 8-SOI... |
FDS7064N7 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 16.5A 8-S... |
FDS7064N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
FDS7064SN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
FDS7066ASN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 19A 8-SOI... |
FDS7066N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8-SOI... |
FDS7079ZN3 | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 16A 8-SOI... |
FDS7082N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 17.5A 8-S... |
FDS7088N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8-SOI... |
FDS7088N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8-SOI... |
FDS7096N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 14A 8SOIC... |
FDS7288N3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A 8-SOI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...