FDS7296N3 Allicdata Electronics
Allicdata Part #:

FDS7296N3-ND

Manufacturer Part#:

FDS7296N3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 15A 8SOIC
More Detail: N-Channel 30V 15A (Ta) 3W (Ta) Surface Mount 8-SO
DataSheet: FDS7296N3 datasheetFDS7296N3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FDS7296N3 is a single-channel vertical double-diffused MOSFET (VDMOS) transistor operating in the vertical DMOSFET vertical structure. It utilizes a technology called depleted-clamp MOSFET, which is designed for ramping to low saturation voltages with excellent rate and current capability. The FDS7296N3 is widely used in switching power supplies, telecom and automotive applications, including audio amplifiers, lighting products and HVAC (heating, ventilation and air conditioning)

The FDS7296N3 is designed to function with a metal-oxide semiconductor (MOS) structure, with the positive voltage serving as drain current, supplying a metal gate with “depleted” amplifiers (serving as source and drain). This in turn provides improved on-state resistance (RS) and excellent power dissipation (PD).

In the working principle of a FDS7296N3, the depletion mode of operation employs a “floating gate structure” in the absence of any control voltage. In this instance, the device functions as a depletion mode MOSFET, and the drain characteristics look like a diode. The drain conductivity increases as the bias voltage is increased and the drain can be brought to almost zero voltages. Also, because no control voltage is applied, the drain current increases with increasing gate bias until the current reaches a steady state where it can\'t be increased any further due to internal gate impedance.

In the field of power supply, the FDS7296N3 is designed for use in low-dropout regulators, conversion circuits and other related applications. In addition, it can serve in power supply circuits, such as resonant circuits, to generate high frequency/high power output pulses over a wide range of temperatures without degradation of performance.

Moreover, the FDS7296N3 is also utilized in the field of telecommunications. It helps to reduce the sizes of switching power supplies and polynomial parameters, and the application of a high voltage device reduces the number of components needed. Additionally, due to its higher off-state voltage breakdown and low on-state drain current leakage, the FDS7296N3 can also be utilized in mobile phone base stations.

In the automotive industry, the FDS7296N3 is used for automating internal combustion engines, as an efficient device for controlling voltage and power. It can be operated transversely and provides both high drain current and high off-state voltage breakdown. It has excellent high-frequency circuit performance and simplifies associated circuit build-up.

Waterproof operation is possible due to the presence of superior waterproof coatings and strong polysilicon. High current capability and high switching speed make the FDS7296N3 ideal for automotive applications such as conversional injection, efficient fuel injection, and engine control.

The FDS7296N3 is a very beneficial transistor, with a wide range of application fields and an excellent operational capability. Its low drain-source resistance and excellent high lever output are two of its key characteristic, but the biggest draw is its depletion mode, allowing for reliable operation regardless of the applied gate-source voltage.

The specific data is subject to PDF, and the above content is for reference

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