FDS7066ASN3 Discrete Semiconductor Products |
|
Allicdata Part #: | FDS7066ASN3TR-ND |
Manufacturer Part#: |
FDS7066ASN3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 19A 8-SOIC |
More Detail: | N-Channel 30V 19A (Ta) 3W (Ta) Surface Mount 8-SO |
DataSheet: | FDS7066ASN3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2460pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 62nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 19A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FDS7066ASN3 is an advanced power MOSFET device designed for use in automotive, industrial and consumer applications such as DC-DC converters, motor control, power packs and energy storage systems. It is a single, unipolar N-channel MOSFET device with an integrated body diode located in the active area which enables it to provide low on-capacitance, fast switching times and low conduction losses. It also features a low threshold voltage making it suitable for applications such as low voltage motor control and power supply regulation. The FDS7066ASN3 is designed to handle currents of up to 8A and voltages up to 20V, and its low on-resistance ensures it has a low conduction loss.
The FDS7066ASN3 is a unipolar N-channel MOSFET device, which means that it is designed to be used in devices which are connected to the positive power supply line. The integrated body diode is located in the active area and enables the device to switch and conduct faster and with lower capacitance than other devices. This helps to reduce power loss and improve efficiency. The low threshold voltage means that the device is suitable for applications which require low voltage, such as motor control and power supply regulation.
The FDS7066ASN3 can be used in a variety of applications due to its broad range of operation conditions. It is suitable for use in DC-DC converters and motor control circuits, as well as power control packs and energy storage systems. It is also suitable for use in renewable energy systems, such as solar and wind power, as well as in many commercial, industrial and automotive applications.
The working principle of the FDS7066ASN3 involves controlling the flow of current between the gate and the source of the device. A voltage is applied to the gate which causes the flow of current between the source and drain. As the voltage is increased, the current flow increases and vice versa. The device is designed to turn off when the gate voltage is reduced to a certain level, which is known as the threshold voltage. The device also has a body diode which ensures that any positive voltage is blocked and hence prevents current flow in the reverse direction.
In summary, the FDS7066ASN3 is an advanced power MOSFET device designed for use in many automotive, industrial and consumer applications. It is a single, unipolar N-channel device with an integrated body diode which enables it to provide fast switching times and low conduction losses. It is suitable for use in applications such as DC-DC converters, motor control, power packs and energy storage systems, as well as a wide range of renewable energy systems. The device works by controlling the flow of current between the gate and the source, and the body diode blocks any reverse flow of current.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FDS7788 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 18A 8-SOI... |
FDS7760A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
FDS7764A | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8-SOI... |
FDS7764S | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 13.5A 8SO... |
FDS7098N3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 14A 8SOIC... |
FDS7296N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 15A 8SOIC... |
FDS7066N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8SOIC... |
FDS7088SN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8SOIC... |
FDS7779Z | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 16A 8SOIC... |
FDS7060N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 19A 8-SOI... |
FDS7064N7 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 16.5A 8-S... |
FDS7064N | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
FDS7064SN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 16A 8-SOI... |
FDS7066ASN3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 19A 8-SOI... |
FDS7066N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8-SOI... |
FDS7079ZN3 | ON Semicondu... | -- | 1000 | MOSFET P-CH 30V 16A 8-SOI... |
FDS7082N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 17.5A 8-S... |
FDS7088N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 21A 8-SOI... |
FDS7088N7 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 23A 8-SOI... |
FDS7096N3 | ON Semicondu... | -- | 1000 | MOSFET N-CH 30V 14A 8SOIC... |
FDS7288N3 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 30V 20A 8-SOI... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...