Allicdata Part #: | FDU8580-ND |
Manufacturer Part#: |
FDU8580 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 35A I-PAK |
More Detail: | N-Channel 20V 35A (Tc) 49.5W (Tc) Through Hole TO-... |
DataSheet: | FDU8580 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1445pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 49.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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FDU8580 application field and working principle
FDU8580 is a low voltage, single N-channel enhancement mode MOSFET. This MOSFET is ideal for general purpose switching applications and has extremely low on-resistance. It has several enhanced features including soft-switch technology, anti-parallel diode, and Schottky clamp diode. FDU8580 is ideal for use in DC or AC switching applications, as well as voltage regulation, power conditioning, and power management.
Application Fields
FDU8580 is especially suitable for applications which require high switching speed, low power loss, and low on-resistance. The device is suitable for DC or AC switching applications, such as voltage conversion, switching power supply, battery charger, motor controls, and other consumer applications.
It is also suitable for applications which need to provide a relatively low source-drain voltage and low gate voltage. Such as mobile phones, notebook bodies, car electronics, power tools, and other consumer electronics. FDU8580 is also suitable for automotive applications which require low voltage and low on-resistance.
Working Principle
FDU8580 is a single N-channel enhancement mode MOSFET. The device consists of a drain, source, and gate. The gate is connected to an insulated-gate, which is used to control the device. When the gate-insulated voltage is greater than the threshold voltage, the N-channel MOSFET is turned on and current is allowed to flow through the device. The VGS (gate-source voltage) determines the amount of current flow through the device. The higher the VGS, the higher the current that can be passed through the device.
FDU8580 has several enhanced features to increase its performance. It has a soft-switch feature, which reduces the on-state drain-source voltage and provides better switch-on and switch-off characteristics. Additionally, it has an anti-parallel diode, which protects the device from back-EMF when it is turned off. Lastly, there is a Schottky clamp diode to protect the device from voltage transients.
Conclusion
FDU8580 is a low voltage, single N-channel enhancement mode MOSFET ideal for general purpose switching applications. It has several enhanced features which provide for better switch-on and switch-off characteristics, as well as protection against back-EMF and voltage transients. FDU8580 can be used in DC and AC switching applications, as well as voltage regulation, power conditioning, and power management.
The specific data is subject to PDF, and the above content is for reference
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