FDU8770_F071 Allicdata Electronics
Allicdata Part #:

FDU8770_F071-ND

Manufacturer Part#:

FDU8770_F071

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 25V 35A IPAK
More Detail: N-Channel 25V 35A (Tc) 115W (Tc) Through Hole IPAK...
DataSheet: FDU8770_F071 datasheetFDU8770_F071 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: PowerTrench®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3720pF @ 13V
FET Feature: --
Power Dissipation (Max): 115W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: IPAK (TO-251)
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The FDU8770_F071 is a logic level N-channel enhancement mode field-effect transistor (FET) suitable for switching applications in a wide range of voltage and current levels.

The FDU8770_F071 is primarily used in applications where the switching load is unipolar and the control signal is a logical digital signal. Typical applications include on/off control circuits, low-side switching circuits, and switching audio and DC power sources. The upper and lower channel resistance of the FDU8770_F071 is very low, which makes it an ideal choice for switching high-current loads with low power losses.

Working Principle

The FET is a voltage controlled device, and the FDU8770_F071 follows this principle for operation. When a voltage is applied between the gate and source terminals, the current will flow from the drain terminal to the source terminal and the device is said to be ‘ON’. Conversely, when the voltage between the gate and source is reduced to zero or near zero, the current flow is blocked and the device is ‘OFF’.

The FDU8770_F071 operates by applying a voltage to the control (or gate) terminal. When a given voltage is reached, the charge carriers flow between the source and the drain and current flows, leading to a change in the resistance of the device. This process is known as VGSth or ‘threshold voltage’ and is the voltage at which the FET begins to conduct for a given application.

Application Field

The FDU8770_F071 is a highly reliable device, suitable for a wide range of applications. It is suitable for controlling low power consumption and low voltage switching in consumer electronics and automotive applications. It also finds use in high-side, low-side, and safety load switching applications where low power dissipation is desired.

The FDU8770_F071 is particularly well-suited for use with DC motor control, as the FET offers fast switching speeds with low on-resistance. It is also suitable for use in AC circuits, handling switching current up to 25A and voltage up to 100V. In addition, the FET features an ultra-low gate delay time and near-zero stand-by power consumption.

Other applications that benefit from the use of the FDU8770_F071 include LED drivers, power management systems, and solar micro-inverters. Overall, the FET is a highly versatile device and can be adapted for many industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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