FDU8878

Series:	PowerTrench®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	15 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	880pF @ 15V
FET Feature:	--
Power Dissipation (Max):	40W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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FDU8878 Application Field and Working Principle

The FDU8878 is a power MOSFET specifically designed for use in high power applications. It is manufactured by Fairchild Semiconductor and is one of their most powerful MOSFETs. The manufacturer has designed the MOSFET to provide an immense current handling capability and to withstand greater voltage spikes than other types of power transistors. This makes the FDU8878 suitable for use in a variety of high power applications such as power amplifiers, power supplies and motor controls.

MOSFET Structure

Before looking into the application field and working principle of the FDU8878, it is important to understand the basic structure of a MOSFET. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor. A MOSFET consists of three basic parts, gate, source and drain. The gate is used as an electronic switch and controls the flow of electrons between the source and the drain. The source and the drain are the two terminals that define the channel of the MOSFET.

FDU8878

The FDU8878 is a N-channel power MOSFET with a maximum power dissipation of 90W. It has a drain-source voltage rating of 60V and a drain-source current rating of 420mA. It has a maximum voltage spike of 1500V and a maximum temperature rise of 55°C. The FDU8878 also has a thermal resistance of 0.27°C/W which is lower than that of other power transistors.

Application Fields of FDU8878

Given its impressive specifications, the FDU8878 can be used for a variety of high power applications. It can be used as a switch in a regulator, power supply, motor driver or amplifier circuit. It can also be used in switching circuits for lights, solenoids, relays or pumps. Additionally, the FDU8878 is also suitable for use in robotics and other high power applications.

Working Principle of FDU8878

The FDU8878 works on the principle of voltage control. That is, when a voltage is applied at the gate, it reduces the resistance between the source and the drain, allowing current to flow between them. This is known as “inversion” and it is the process by which power MOSFETs are able to switch on and off with extreme speed and accuracy.The gate terminal of the FDU8878 is rated with a maximum voltage of 10V and a maximum gate current of 1mA. Therefore, the voltage applied to the gate must be below these limits to avoid damaging the MOSFET. When a voltage is applied to the gate, a small current known as the “gate-source” current flows through the channel, reducing its resistance and allowing current to flow between the source and the drain.

Conclusion

The FDU8878 is a powerful N-channel MOSFET from Fairchild Semiconductor, designed for use in high power applications such as power amplifiers, power supplies and motor controls. It has impressive specifications with a drain-source voltage rating of 60V, a maximum voltage spike of 1500V and a thermal resistance of 0.27°C/W. The FDU8878 works on the principle of voltage control, using a small current to reduce the resistance between the source and the drain when a voltage is applied at the gate.

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