Allicdata Part #: | FDU8870-ND |
Manufacturer Part#: |
FDU8870 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 160A I-PAK |
More Detail: | N-Channel 30V 21A (Ta), 160A (Tc) 160W (Tc) Throug... |
DataSheet: | FDU8870 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.9 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 118nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5160pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 160W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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FDU8870 is an high-efficiency single P-Channel enhancement mode Field Effect Transistor (FET) with a low On resistance. It is used for amplifying or switching electronic signals and has wide influence in electrical and electronic applications such as relay, motor control, switch mode power supply and power management. The device features a built-in gate protection diode against electrostatic discharges.
The FDU8870 is a single P-Channel enhancement mode Field Effect Transistor (FET) mainly used for amplifying or switching electronic signals. It has low On resistance and a built-in gate protection diode for ESD protection. It is designed to operate from 3V to 24V.
The FDU8870 has two distinct operation regions: Enhancement mode and Depletion mode. In the Enhancement mode, a positive voltage applied to the gate end of the FET will create an electric field between the gate and the source, thus turning the flow path of current on. In the Depletion mode, the drain is shorted to the source and the gate is left open. The gate voltage will control the size of the depletion region and the current flow. The device will be in an OFF state if the gate is left open.
For small-signal switching applications, the FDU8870 has gate resistance as low as 3ohms and the drain-source resistance as low as 7ohms with a voltage of 4V. Its drain current goes up to 4A and the total power dissipation is as high as 18W. With its high currents capability and low power dissipation, it can highly improve the efficiency of the circuit.
The drain-source breakdown voltage of FDU8870 is as high as 30V. Under high dissipative current conditions, it can continue to drive a current up to 6.4A(Max) at 16V and 4.8A(Max) at 24V. It is a great asset for amplifying and switching electronic circuits.
This device is ideal for applications such as relay, motor control, switch mode power supplies and power management. In the traditional relay, the FDU8870 can replace the mechanical contacts and maintain a high switching frequency. In motor control and power supplies, the FDU8870’s voltage clamping circuit helps to lessen the switching losses while also improving the efficiency of the circuit and the switching life. Moreover, the FDU8870 can be used as a high-side switch in circuits involving a low side switch in which it can provide a level shift to turn-on and turn-off the low side switches.
This device is also suitable for high frequency circuits such as switching power supplies, DC/DC converters, inverters and light control applications. The built-in gate protection diode and the low On resistance makes it an ideal choice for these circuits.
The FDU8870 offers high performance and versatility to meet the electrical and electronic needs of today’s technology such as LED, motor control, switch mode power supply and power management. This device has high current capability, low On resistance, high drain breakdown voltage and ESD protection, making it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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