FDU8880

Series:	PowerTrench®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1260pF @ 15V
FET Feature:	--
Power Dissipation (Max):	55W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-251
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

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Introduction

The FDU8880 is one of the most popular metal-oxide-semiconductor field-effect transistors (MOSFETs) currently available on the market. It is an N-channel MOSFET, also known as an insulated gate field-effect transistor (IGFET). This component is typically used in applications that require high current or voltage drive. It is often used in power amplifiers, switching circuits, and linear voltage regulator circuits. It offers significant advantages over other types of transistors, such as high power efficiency,high switching speed, and low capacitance.

Working Principle

The FDU8880 is a three terminal device, consisting of the drain, gate, and source. The gate is insulated from the drain and source by the gate oxide and operates with voltages between the gate and source. When a voltage is applied to the gate, a conductive path between the drain and the source is created. This path is called a channel. The modes of operation of the FDU8880 depend on the potential difference between the gate and the source of the MOSFET.When a zero voltage is applied to the gate, the FDU8880 is considered to be in the cut-off mode. In this mode, the channel is turned off and virtually no current is allowed to flow between the drain and the source. When a negative voltage is applied to the gate, the FDU8880 is in the Enhancement mode. In this mode, the channel is turned on and significant current is allowed to flow between the drain and the source.

Fabrication

The FDU8880 is usually fabricated on a silicon substrate with a layer of gate oxide on the surface. The gate oxide is used to separate the gate from the drain and source terminals. The gate is then contacted by a polysilicon gate layer and source and drain contacts are made at the edges of the substrate. The polysilicon gate layer is protected by a passivation layer, which consists of a dielectric material.

Characteristics

The FDU8880 has a wide range of current and voltage handling characteristics. It has a typical on-resistance of 5 ohms and can handle a voltage up to 80V. The device can also handle a maximum drain current of 18 A. The device also offers excellent switching speed, with a typical transition time of 5 nanoseconds. The device can operate at high frequency with a typical frequency response of 2MHz.

Applications

The FDU8880 is used for various applications. It is commonly used in power amplifiers, switching circuits, and linear voltage regulator circuits. It can also be used in power supplies, motor control circuits, and signal switching circuits. The FDU8880 is also used in many automotive applications such as airbag systems and sensors. The device is also used in consumer electronics such as DVD players and computers.

Conclusion

The FDU8880 is a popular metal-oxide-semiconductor field-effect transistor (MOSFET). It is an N-channel MOSFET and is typically used in applications that require high current or voltage drive. It offers significant advantages over other types of transistors, such as high power efficiency, high switching speed, and low capacitance. The FDU8880 is used in many applications, such as power amplifiers, switching circuits, and linear voltage regulator circuits. It is used in many automotive applications and consumer electronics.

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