Allicdata Part #: | FDU8778-ND |
Manufacturer Part#: |
FDU8778 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 35A I-PAK |
More Detail: | N-Channel 25V 35A (Tc) 39W (Tc) Through Hole TO-25... |
DataSheet: | FDU8778 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 845pF @ 13V |
FET Feature: | -- |
Power Dissipation (Max): | 39W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FDU8778 is a low-leave-off single P-channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is specifically designed for the applications that require low gate charge such as AC-DC converters, motor control and switches. The transistor works by controlling the current through the channel between the source and the drain. It is designed to operate in the enhancement-mode, which means that the voltage put across the gate and the source must be higher than the source in order to turn the transistor on.
FDU8778 is a P-channel enhancement mode MOSFET which is specifically designed for DC-DC converters, motor control and switches. It has a parameter voltage rating of ± 20V and an ON-resistance of 0.6 ohm. It has an isolation voltage of new 1500V. The FDU8778 is a very robust package with a low gate charge and a low-threshold voltage of just 2.0 volts. This allows for high operating speeds in applications like switching power supplies and motor control.
The operating principle of the MOSFET is fundamentally different from that of a bipolar junction transistor. In a MOSFET, the device is switched on or off by the application of an electric field to the gate terminal which is electrically insulated from the other terminals (source, drain and substrate). In an enhancement mode MOSFET, the gate-source voltage must be greater than the source voltage to turn the transistor on. When the source voltage is greater than the gate-source voltage, the transistor is in a ‘cutoff’ state and no current flows between the source and drain.
The FDU8778 can be used in all sorts of applications due to its low gate charge, and low-threshold voltage. These include switching power supplies, motor control and reverse battery protection. The FDU8778 is also capable of operating at high speeds and can be used in digital logic circuits, analog circuits and audio applications. The MOSFET is also suitable for use with fast shut down and start up times for DC-DC converters.
The FDU8778 is a great option for those looking for an economical solution for AC-DC power converters, motor controls and switching power supplies. With its low gate charge, low-threshold voltage, and great performance and reliability, it is sure to meet your needs. The MOSFET is also suitable for use in digital logic circuits, analog circuits and audio applications.
The specific data is subject to PDF, and the above content is for reference
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