FDU8770

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FDU8770 Application Field and Working Principle

FDU8770 is a new generation high-performance customizationable N-channel vertical double diffused metal oxide semiconductor field effect transistor (MOSFET). It is a single-transistor type of MOSFET designed with the capability to switch high drain-source voltage. This vertical double diffused MOSFET is powered by 20 volts and has a maximum drain-source voltage of 80 volts. It is mainly used in power amplifiers, low pass filters, and amplifiers with feedback.

The main structure of the MOSFET includes the gate, the body, the drain, and the source. The gate is an insulated gate separated from the body by an oxide layer. The body, which is usually composed of n-type silicon, is connected to the drain and source terminals. The drain and source are made up of n-type silicon and p-type silicon respectively. These three well-connected elements create a three-dimensional channel.

When the gate is triggered, an electric field is created between the gate insulation and the semiconductor body, generating a voltage drop across this section. As a result, a conduction channel will be created between the source and the drain. This allows current to flow from the source through the body and to the drain. When the gate is opened, current flows in the reverse direction, allowing the transistor to act as a switch.

The operating temperature of the FDU8770 is -55 degrees Celsius to 150 degrees Celsius. This range makes it a suitable device to be used in a wide range of applications, such as power management systems, audio amplifiers, high performance analog circuits, and precise control circuits. Also, the ON-resistance of the FDU8770 is low at 0.004 ohms, allowing the transistor to provide better performance while dissipating low power.

When it comes to the switching characteristics of FDU8770, the rise time and fall time both range between 7 and 10 nanoseconds (ns) depending on the applied gate voltage. This makes FDU8770 suitable for applications that require low power and high speed switching. Additionally, the gate-source threshold voltage (VGS-th) of the MOSFET ranges between 1.6 to 4.2 volts and is adjustable depending on the required drain current.

Finally, FDU8770 can be used in various packages that suit both through-hole and surface-mount requirements. This makes the MOSFET suitable for PCB designs regardless of the complexity. At the same time, features such as low parasitics, low gate charge and low gate voltage allow FDU8770 transistors to offer superior performance compared to other MOSFETs.

In conclusion, FDU8770 is a high performing and customizationable single-transistor MOSFET mainly used in high-power power management and control systems. The MOSFET is low in ON-resistance, providing superior performance. Additionally, it has very fast switching characteristics, making it suitable for high speed circuits. Through its package options, FDU8770 is suitable for PCB designs of all types.

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