Allicdata Part #: | FDU8896-ND |
Manufacturer Part#: |
FDU8896 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 30V 94A I-PAK |
More Detail: | N-Channel 30V 17A (Ta), 94A (Tc) 80W (Tc) Through ... |
DataSheet: | FDU8896 Datasheet/PDF |
Quantity: | 1000 |
Series: | PowerTrench® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Ta), 94A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2525pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 80W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251 |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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FDU8896 is a power MOSFET series, with low on-state resistance, high current handling capability and supports up to 20A of continuous current. Using an optimised design, FDU8896 also has a low output characteristics capacitance. This makes it attractive for switch-mode and other power applications, such as DC-DC converters and motor drivers.
By definition, MOSFET is the acronym of Metal Oxide Semiconductor Field Effect Transistors. It is a critical component for the vast majority of modern switching operations. Compared with traditional BJT (Bipolar Junction Transistor), MOSFET is superior in its lower electric power consumption, higher switching speed (up to 1 uSec) and greater frequency, while barely generating any heat.
FDU8896 is a single P-channel MOSFET device. It basically consists of a source, a gate, and a drain, with the gate being insulated from the source and the drain. It works as follows:
When a gate-to-source voltage Vgs is less than its threshold voltage Vgs (th), the device is in the off-state, meaning no current exists between the source and drain. Increasing Vgs to above the threshold voltage will turn it into the on-state and allow current flows between the source and the drain. As long as the gate-to-source voltage stays above the threshold voltage, the channel is created and allows current flow. When Vgs drops below the threshold, the device will be back to the off-state. This conduction state is known as the tri-state, where the device is neither in the on or off state.
Being an ideal switching device or a variable resistor, the FDU8896 is widely used in power management, audio/video applications, battery charges and portable electronic devices, where efficiency and long battery life are a major concern. With its high current handling capability and low RDS(on) value, it is suitable for high-power DC motor control. In audio/video equipment, it functions as an EMI filter and power saving circuit.
Further enhancing its usability, the FDU8896 device is RoHS compliant and offers a wide temperature range of -55°C to +175°C in industrial grade version. It also has small dimensions and offers ESD (electrostatic discharge) protective ratings of up to 2.5KV HBM, making it an ideal choice for a variety of products.
Overall, FDU8896 is a tried and tested MOSFET series with optimized design, low resistive characteristics, and high current handling capabilities. This makes it the perfect choice for a variety of applications, ranging from audio/video equipment, motor control, and general power management. With its high efficiency, wide temperature range and certified compliance, it is the ideal component for a variety of products that require efficient, reliable and long lasting operation.
The specific data is subject to PDF, and the above content is for reference
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