FDU8876 Allicdata Electronics
Allicdata Part #:

FDU8876-ND

Manufacturer Part#:

FDU8876

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 30V 73A I-PAK
More Detail: N-Channel 30V 15A (Ta), 73A (Tc) 70W (Tc) Through ...
DataSheet: FDU8876 datasheetFDU8876 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: PowerTrench®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V
FET Feature: --
Power Dissipation (Max): 70W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description

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The FDU8876 is a 8-pin single N-channel MOSFET designed to offer high levels of load current, operating voltage, as well as low on-resistance. The device utilizes a vertical DMOS technology allowing the user to switch high load current and high load voltage. This makes the FDU8876 ideal for a broad range of applications such as converters, power supplies, DC-DC converters, motor control, and audio and video switching applications.

The FDU8876 single N-channel MOSFET is operated by applying an input voltage at the gate terminal. This input voltage creates an attractive field which pulls the channel open resulting in higher current flow through the channel. This field becomes stronger as the application voltage increases, thus switching the MOSFET on more strongly. The FDU8876 has an advanced design that reduces parasitic capacitances leading to a low on-resistance feature. The device can switch high loads with low on-resistance and low power loss. The FDU8876 is widely used in many applications due to its robust and reliable features.

The FDU8876 is widely used in various applications due to its robust, reliable and high-performance features. Some of the top applications include switching high powered loads, converters, power supplies, DC-DC converters, motor control and audio and video switching. As a MOSFET, the FDU8876 provides very low-level RDS(on) when compared to other traditional transistor types.

The FDU8876 provides excellent load current, operating voltage, and low on-resistance. It is designed with advanced vertical DMOS technology allowing the user to switch high load current and high load voltage with low on-resistance and minimal power loss. The FDU8876 is also used as a high-speed switching device with low insertion loss, thus making it ideal for use in high-frequency operations.

The working principle of the FDU8876 is based on the MOSFET structure. The channel is formed between the source and drain terminals by a lightly-doped n-type substrate below the gate. By applying an input voltage at the gate terminal, the attractive field created by electric charges pulls the channel open resulting in higher current flow through the channel. This field becomes stronger as the application voltage increases, thus switching the MOSFET on more strongly. The FDU8876 is capable of handling large currents due to its optimal design, which reduces parasitic capacitances and thus increases the performance of the device.

In summary, the FDU8876 is a single N-channel MOSFET used for switching high powered loads, converters, power supplies, DC-DC converters, motor control and audio and video switching. It is operated by applying an input voltage at the gate terminal and provides low level RDS(on) and excellent load current, operating voltage and low on-resistance when compared to other types of transistors. The device utilizes an advanced vertical DMOS technology allowing it to switch high power with low power loss and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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