FJNS3213RTA Allicdata Electronics
Allicdata Part #:

FJNS3213RTA-ND

Manufacturer Part#:

FJNS3213RTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJNS3213RTA datasheetFJNS3213RTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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The FJNS3213RTA application field and working principle can be classified under transistors - bipolar (BJT) - single, pre-biased. A bipolar junction transistor (BJT) is a three-terminal electronic device that uses either n-type or p-type semiconductor material for its main components. The FJNS3213RTA is a single pre-biased BJT with integrated resistors for a fixed combination of collector-emitter and base-emitter voltages. This makes it a relatively uncommon type of BJT, but its application field is largely unrestricted.

The basic principle of operation of a BJT involves bringing two pieces of opposing semiconductor materials together and then applying a voltage across them. This makes a semi-conducting junction between the two pieces of material that connects the base and emitter terminals. Depending on the type of material used and the amount of voltage applied, the transistor can either be in an on or off state.

The FJNS3213RTA has an integrated resistor combination that provides a pre-set collector-emitter and base-emitter voltages. When a current is applied to the base, the voltage combination is maintained and the transistor remains in its on or off state. This makes it an ideal device for applications that require high gain, low noise, and fixed bias voltage. Examples of applications for the FJNS3213RTA include logic circuits, amplifiers, and frequency converters.

Additionally, the FJNS3213RTA has a relatively low operating current and threshold voltage. This allows it to be used in applications where space is a critical factor. For example, the transistor can be used in signal conditioning and power switching circuits, or even in integrated circuit applications. Although it is a relatively uncommon BJT, when used correctly, the FJNS3213RTA can provide effective and reliable performance in a wide range of applications that require a fixed bias voltage.

The specific data is subject to PDF, and the above content is for reference

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