Allicdata Part #: | FJPF13007-ND |
Manufacturer Part#: |
FJPF13007 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 8A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Thro... |
DataSheet: | FJPF13007 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 40W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | FJPF13007 |
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FJPF13007 is a semiconductor device categorized as single type bipolar junction transistor (BJT). It forms a three-terminal electronic device, mainly used to amplify or switch electronic signals.
Construction
The FJPF13007 BJT consists of three semiconductor layers arranged in a sandwich like structure. It has two base layers, known as emitter and collector, and one central layer known as collector. The emitter and collector layers are made up of a very thin layer of the same semiconducting material. This material can be either silicon-based or gallium arsenide-based, depending on the type of BJT device.
Operation
FJPF13007 operates in junction of two semiconductor materials. The base region acts as a junction between the two semiconductor layers. This junction acts as a diode, meaning it only allows current to flow only in one direction. It therefore acts as a switch, allowing the current to pass between the emitter and the collector when it is in the ‘on’ state.
The voltage applied to the base terminal can control the current flow through the device, and hence the amount of current flowing between the emitter and the collector. When a voltage is applied to the base of the BJT, the emitter current is controlled by the amount of current that can pass through the base-collector junction.
The base current also depends on the amount of current flowing between the emitter and the collector. This is known as the ‘gain’ of the device, and it determines the amount of amplification that can be achieved by the BJT. Thus, the FJPF13007 is mainly used in applications that require high gain.
Applications
FJPF13007 transistors are mainly used in applications that require amplification and switching. These transistors are commonly used in amplifiers, radio transmitters, oscillators, and other applications that require amplification of small signals. For example, they can be used in audio amplifiers to boost the level of a low-level signal and make it audible. They are also commonly used in switching applications, such as power-on/off and motion control circuits.
FJPF13007 transistors can also be used in power circuits, where they are used as gate drivers and voltage controlled current sources. Additionally, they are used in low-noise amplifiers and low-power amplifiers, where high gain and good linearity are required.
Conclusion
The FJPF13007 is a single bipolar junction transistor (BJT). It is a three-terminal electronic device, whose operation is based on the junction between two semiconductor materials. It is mainly used in applications that require amplification and switching, such as amplifiers, oscillators, and power circuits. Moreover, its ability to provide high gain and good linearity makes it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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