Allicdata Part #: | FJPF13009H2TU-ND |
Manufacturer Part#: |
FJPF13009H2TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 12A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 400V 12A 4MHz 50W Thr... |
DataSheet: | FJPF13009H2TU Datasheet/PDF |
Quantity: | 647 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 12A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 3A, 12A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 5A, 5V |
Power - Max: | 50W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | FJPF13009 |
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.The FJPF13009H2TU is a type of transistors and are classified as a Bipolar junction transistor (BJT). In this type of transistors, two junctions are formed between two types of semiconductor materials such as p-type and n-type and the current flow relies on these two junction type. The FJPF13009H2TU is a single transistor and it is used for a wide range of applications.
The main applications of the FJPF13009H2TU are for amplifying, switching and for signal processing as it has high current carrying capabilities, it can also tolerate high temperatures, thus making it suitable for use in most electronic applications. One of the main applications of the FJPF13009H2TU is in the field of robotics where they are used for controlling the speed and direction of robotic actuators, amplifying the signal from sensors and providing discrete logic control. In addition to that, the FJPF13009H2TU can be used in power amplifiers and further audio applications, communication systems and more.
The function of the FJPF13009H2TU is based on the collector-to-emitter current flow and is described as the beta ratio. This term describes the amplification factor which is obtained when current is flowing in the collector-to-emitter direction. The working principle is based on the current gain of the transistor which is measured by the ratio of the collector current and the base current of the transistor. When there is an external voltage applied to the base-to-emitter junction, the current in the collector-to-emitter junction increases and this increase is said to be the gain or the amplification factor of the transistor. This current gain is further increased when the base current is increased.
The FJPF13009H2TU also has a high power dissipation rating which means that it can handle heavy loads without causing damage to the device. It also has high input impedance and low output impedance, making it ideal for applications where high switching speeds and high current carrying capabilities are important. The FJPF13009H2TU has a wide operating temperature range of -55 °C up to +175 °C and it is also able to offer military-grade resistors for high precision applications.
In summary, the FJPF13009H2TU is a type of bipolar junction transistor (BJT) which is a single transistor and used for a wide range of applications. Its main applications are for amplifying, switching and for signal processing due to its high current carrying capabilities, high power dissipation rating and high input impedance. The working principle is based on the current flow through the collector-to-emitter junction and its current gain is determined by the ratio of the collector current and base current. The FJPF13009H2TU has a wide operating temperature range and is able to offer military-grade resistors for precision applications.
The specific data is subject to PDF, and the above content is for reference
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