Allicdata Part #: | FJPF13007TTU-ND |
Manufacturer Part#: |
FJPF13007TTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 8A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Thro... |
DataSheet: | FJPF13007TTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 8 @ 2A, 5V |
Power - Max: | 40W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | FJPF13007 |
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The FJPF13007TTU is a silicon NPN transistor of the bipolar junction transistor type. This type of transistor is generally used to switch and amplify signals. The FJPF13007TTU is particularly useful for high voltage and high current switching applications, and can be used to control current flows up to 200V and 500mA.
The FJPF13007TTU consists of a silicon die, mounted onto the surface of a glass-epoxy substrate. The substrate is arranged in a vertical column, with two pins each at the top and bottom of the column. The pins are connected to the contacts on the silicon die, so that the energy is transmitted through the substrate material. The contacts are then connected to external circuits, such as the base, collector and emitter. The base is the control terminal, while the collector and emitter are used to switch or amplify signals. They can also be used to provide high current and gain control.
The FJPF13007TTU has two distinct modes of operation. In the first mode, the transistor is operated as a switch. In this mode, current flows from the base to the collector when the base is supplied with a voltage signal. This signal is received by the collector, and is switched on and off by the signal supplied to the base. The other mode of operation is used for signal-amplification, with the transistor acting as an amplifier. In this mode, current flows from the base to the collector when the base is supplied with an increase in voltage, and decreases when the voltage is decreased.
The FJPF13007TTU has a wide range of operating temperatures, ranging from -65 degrees Celsius up to 200 degrees Celsius. It is also humidity tolerant, and is capable of operating at up to 95% relative humidity without any reduction in performance. Additionally, the transistor has been designed to be ESD (electrostatic discharge) protected, to ensure long-term reliability.
The FJPF13007TTU offers a range of advantages, including the ability to handle high current, increased frequency stability, and an operating temperature range which makes it suitable for a variety of applications. Additionally, its compact size and robust design make it an ideal choice for applications where a high level of performance is desired.
The FJPF13007TTU is a versatile and reliable transistor, capable of handling a wide range of applications. It is suitable for use in switching and signal amplification applications, and its high current and temperature rating make it an ideal choice for applications requiring high power. Its robust design and ESD protection provide increased reliability and long-term performance.
The specific data is subject to PDF, and the above content is for reference
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