FJPF13007H1TTU

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FJPF13007H1TTU is a type of single bipolar junction transistor (BJT). The BJT is a type of transistor consisting of three layers or layers of semiconductor materials as a base, emitter and collector. The BJT is used as an amplifier and switch in electronic circuits. In this article, we will discuss the application field and working principle of the FJPF13007H1TTU.

The FJPF13007H1TTU is suitable for applications which require high-switching speed, such as logic circuits, and is able to operate at temperatures up to 175°C. It is available in a variety of packages, such as TO-220, TO-220FP, D²PAK and D²PAK-7. The rated collector current for this BJT is 5A, with a maximum collector-emitter voltage of 80V. Other specifications include a maximum Collector-Emitter Saturation Voltage (VCE(sat)) of 0.43V and a maximum Collector-Base Cutoff Voltage (VCB) of 45V.

The working principle of a BJT is based on the principle of current control. A BJT operates by controlling the current flowing between the emitter and the collector of the transistor. The behavior of the current flow is determined by the voltage applied to the base and the resistance of the collector and emitter. This type of BJT is normally considered to be a three layer or junction device and uses two p-type and one n-type materials to form the junctions. The three terminals of a BJT are the base, collector and emitter.

When a voltage is applied to the base, a small current also flows from the base to the collector and from the collector to the emitter. This current, known as the base current, controls the current flowing from the collector to the emitter. This is because the base current amplifies the current flow between the collector and emitter, resulting in the voltage across the collector and emitter becoming more negative than the voltage applied to the base. This amplification is known as current gain.

The current gain of a given BJT is usually expressed as the ratio of the collector current to the base current, and is given the symbol hFE. As the base current increases, the collector current also increases, resulting in a higher current gain. However, at some point the current gain will start to decrease. This is due to the voltage across the collector and emitter reaching what is known as the saturation level, where no further current can be increased.

The FJPF13007H1TTU is able to operate at speeds greater than 150MHz, making it suitable for applications such as switching circuits, power amplifiers, high-frequency oscillators and switching converters. It is also capable of driving loads of up to 0.5A, making it suitable for driving LED’s and other low-power applications. Its high voltage capability of 80V also makes it ideal for a variety of applications.

In conclusion, the FJPF13007H1TTU is a type of single bipolar junction transistor (BJT) that is commonly used as an amplifier and switch in electronic circuits. Its ability to operate at high switching speeds and its high voltage capability make it suitable for a variety of applications. It works on the principle of current control, where the base current controls the current flow between the collector and emitter. The current gain of a given BJT is expressed as a hFE value, and the FJPF13007H1TTU is able to operate at speeds greater than 150MHz.

The specific data is subject to PDF, and the above content is for reference