Allicdata Part #: | FJPF13007H2TU-ND |
Manufacturer Part#: |
FJPF13007H2TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 400V 8A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 400V 8A 4MHz 40W Thro... |
DataSheet: | FJPF13007H2TU Datasheet/PDF |
Quantity: | 620 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 2A, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 26 @ 2A, 5V |
Power - Max: | 40W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | FJPF13007 |
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The FJPF13007H2TU is a Single Bipolar Junction Transistor (BJT). It is a NPN transistor commonly used in a wide range of applications. This particular model features an Ic(MAX) of 15A and a very low Vce(sat) rating of 0.4V at Ic=10A. Due to its higher Ic(MAX) rating, it is often the choice for applications that require a higher current capability.
One of the most common applications for an FJPF13007H2TU is power switching. This type of use typically involves turning a power source (DC voltage) on or off in order to control the flow of power to an electronic device. It is often used in motor speed control and motor phase control, as well as in power inverters and DC-DC converters.
The FJPF13007H2TU is a great choice for any application that involves audio amplification. The NPN BJT design allows for a significantly higher current amplifier. It is also suitable for general-purpose control circuits, such as home automation, as well as signal conditioning circuits, such as comparators.
In addition to its popular applications, the FJPF13007H2TU can also be used in analog to digital conversion, data communications, and other circuits that require higher current capability.
The FJPF13007H2TU has a working principle based on a phenomenon known as the transistor effect. This effect occurs when a small current (Base current) applied to one side of the transistor is amplified, resulting in a much higher current (Collector current) on the other side. The Base current is then further amplified and applied to the Collector terminal, resulting in a larger flow of current.
The Base-Collector junction of the FJPF13007H2TU behaves as an open switch when the Base current increases beyond a certain level, a phenomenon known as the break-down voltage. This allows the transistor to switch current faster and more accurately.
The Base-Emitter junction of the FJPF13007H2TU behaves as a closed switch when the Base current increases above the cut-off voltage. This causes the Collector-Emitter junction to be forward-biased, resulting in increased flow of current.
The FJPF13007H2TU also features an integrated heat sink which helps to dissipate heat and improve reliability. This feature is beneficial in applications that are subject to high demands on current or power dissipation.
When properly used, the FJPF13007H2TU can be a great choice for any application requiring higher current capabilities or greater speed. With its many useful features, it is an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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