Allicdata Part #: | FJPF5027RTU-ND |
Manufacturer Part#: |
FJPF5027RTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 800V 3A TO-220F |
More Detail: | Bipolar (BJT) Transistor NPN 800V 3A 15MHz 40W Thr... |
DataSheet: | FJPF5027RTU Datasheet/PDF |
Quantity: | 448 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 800V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 300mA, 1.5A |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 200mA, 5V |
Power - Max: | 40W |
Frequency - Transition: | 15MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Base Part Number: | FJPF5027 |
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The FJPF5027RTU is a dual-channel convenient, fast-operating double Darlington transistor pack, part of the TFLEX family. It is based on two pair of 30V NPN wide bandwidth bipolar transistors within a single 16-pin package. Each pair of transistors features independent base, collector, and emitter pins.
The FJPF5027RTU has an excellent power handling capability and is suitable for applications that require high speed switching, high power switching, line sensing, and high frequency amplifier transistor. It has a small, efficient design and is capable of handling up to 700 mA of current at a continuous, maximum frequency of 300 MHz.
The FJPF5027RTU has an adjustable base resistance and can be adjusted to enable a wide range of current and voltage capability. This allows the FJPF5027RTU to be used in a variety of different applications. The FJPF5027RTU can be used in a broad range of industrial and commercial applications, ranging from solenoid operation to motor control. It can also be used in automotive applications or in the audio and video circuitry.
The FJPF5027RTU is designed to provide fast switchover between holding and releasing current with minimal current leakage. It works by controlling the voltage applied to one side of the junction between two transistors. A voltage applied to the base electrode of one transistor allows current flow between that transistor\'s emitter and collector, while the opposite voltage applied to the other transistor prevents the current flow. By changing the voltage applied to either of the transistors, it is possible to quickly switch between holding and releasing current.
The FJPF5027RTU also has a relatively low power consumption, which makes it suitable for use in portable devices. This may be advantageous for applications where reliable operation is required without sacrificing power consumption. Additionally, its small size makes it useful for tight spaces in printed circuit boards.
The FJPF5027RTU is also widely used for power amplification for audio applications. Its low power consumption, fast switching time and high current capability makes it suitable for use in audio amplifiers. It is also used in circuit protection circuitry, as it is able to handle large currents, is robust, and provides fast switching which can help to prevent circuit damage. Audio power amplifiers also make use of the FJPF5027RTU, since it can provide high current without affecting speed or accuracy.
The FJPF5027RTU is commonly used in the industrial and commercial environment for motor control and line sensing. Its adjustable base resistance is beneficial for applications where current and voltage require varying cycle times. It is also used in a wide range of audio and video applications, such as signal processing, signal generation, video monitoring, power amplifiers, and audio signal routing.
With an adjustable base resistance and fast switching time, the FJPF5027RTU is an excellent choice for use in a wide range of applications. Its small size, low power consumption, and high current capability make it an ideal choice for applications that require fast switching, high power switching, line sensing, and high frequency amplifier transistors.
The specific data is subject to PDF, and the above content is for reference
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